h57v2562gtr Hynix Semiconductor, h57v2562gtr Datasheet - Page 12

• Manufacturer Part Number: h57v2562gtr
• Description: 256mb Synchronous Dram Based 4bank
• Manufacturer: Hynix Semiconductor

AC CHARACTERISTICS II
Note: 1. A new command can be given t
Rev 1.0 / Aug. 2009
RAS Cycle Time
RAS to CAS Delay
RAS Active Time
RAS Precharge Time
RAS to RAS Bank Active Delay
CAS to CAS Delay
Write Command to Data-In Delay
Data-in to Precharge Command
Data-In to Active Command
DQM to Data-Out Hi-Z
DQM to Data-In Mask
MRS to New Command
Precharge to Data
Output High-Z
Power Down Exit Time
Self Refresh Exit Time
Refresh Time
Parameter
Operation
Auto Refresh
CL = 3
CL = 2
RC
after self refresh exit.
(AC operating conditions unless otherwise noted)
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Speed
(MHz)
RC
RRC
RCD
RAS
RP
RRD
CCD
WTL
DPL
DAL
DQZ
DQM
MRD
PROZ3
PROZ2
DPE
SRE
REF
38.7
Min
55
55
15
15
10
1
0
2
2
0
2
3
1
1
-
-
200
100K
Max
64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Synchronous DRAM Memory 256Mbit
Min
60
60
18
42
18
12
t
1
0
2
2
0
2
3
1
1
-
-
DPL
166
+ t
100K
Max
RP
64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
63
63
20
42
20
15
1
0
2
2
0
2
3
2
1
1
-
133
H57V2562GTR Series
100K
Max
64
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
ms
ns
ns
ns
ns
ns
ns
Note
1
12