h57v2562gtr Hynix Semiconductor, h57v2562gtr Datasheet - Page 9

• Manufacturer Part Number: h57v2562gtr
• Description: 256mb Synchronous Dram Based 4bank
• Manufacturer: Hynix Semiconductor

CAPACITANCE
DC CHARACTERRISTICS I
Note:
Rev 1.0 / Aug. 2009
1. VIN = 0 to 3.6V, All other balls are not tested under VIN =0V
2. DOUT is disabled, VOUT=0 to 3.6
Input capacitance
Data input / output
capacitance
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Parameter
Output
Parameter
(f=1MHz)
DC Output Load Circuit
CLK
A0 ~ A12, BA0, BA1, CKE, CS, RAS, CAS, WE
LDQM, UDQM
DQ0 ~ DQ15
(T
A
= 0 to 70
50pF
RT = 50
VTT =
1.4V
Ohom
Pin
Symbol
V
V
o
I
I
LO
OH
C)
OL
LI
Output
Min
Synchronous DRAM Memory 256Mbit
2.4
-1
-1
-
AC Output Load Circuit
Z0 = 50 Ohom
Symbol
Max
CI/O
0.4
CI1
CI2
CI3
1
1
-
H57V2562GTR Series
Unit
Min
uA
uA
2.0
2.0
2.0
3.5
V
V
50pF
RT = 50
VTT =
1.4V
Ohom
Max
IOL = +4mA
IOH = -4mA
4.0
4.0
4.0
6.5
Note
1
2
Unit
pF
pF
pF
pF
9