h57v2562gtr Hynix Semiconductor, h57v2562gtr Datasheet - Page 18

• Manufacturer Part Number: h57v2562gtr
• Description: 256mb Synchronous Dram Based 4bank
• Manufacturer: Hynix Semiconductor

Precharging
Recovering
Activating
CURRENT STATE TRUTH TABLE
Rev 1.0 / Aug. 2009
Current
State
Write
Row
CS RAS CAS WE
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
H
H
H
H
L
L
L
L
X
L
L
L
L
X
L
L
L
L
H
H
H
H
H
H
H
H
H
L
L
L
L
X
L
L
L
L
X
L
L
L
L
H
H
H
H
X
H
H
H
H
X
H
H
H
H
L
L
L
L
L
L
L
L
L
BA0/
BA1
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
X
X
X
X
X
X
X
X
Command
OP CODE
OP CODE
OP CODE
Col Add. A10
Col Add. A10
Col Add. A10
Col Add. A10
Col Add. A10
Col Add. A10
A
Row Add.
Row Add.
Row Add.
max
(Sheet 3 of 4)
X
X
X
X
X
X
X
X
X
X
X
-A0
Mode Register Set
Auto or Self Refresh ILLEGAL
Precharge
Bank Activate
Write/WriteAP
Read/ReadAP
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh ILLEGAL
Precharge
Bank Activate
Write/WriteAP
Read/ReadAP
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh ILLEGAL
Precharge
Bank Activate
Write/WriteAP
Read/ReadAP
No Operation
Description
Synchronous DRAM Memory 256Mbit
ILLEGAL
No Operation:
Bank(s) idle after t
ILLEGAL
ILLEGAL
ILLEGAL
No Operation:
Bank(s) idle after t
No Operation:
Bank(s) idle after t
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
No Operation: Row
Active after t
No Operation: Row
Active after t
ILLEGAL
ILLEGAL
ILLEGAL
Start Write:
Optional AP(A10=H)
Start Read: Optional
AP(A10=H)
No Operation:
Row Active after t
H57V2562GTR Series
Action
RCD
RCD
DPL
RP
RP
RP
Notes
4,11,1
4,12
4,12
4,12
4,12
4,12
4,12
4,13
4,12
18
13
13
13
13
13
13
2
9