h57v2562gtr Hynix Semiconductor, h57v2562gtr Datasheet - Page 19

• Manufacturer Part Number: h57v2562gtr
• Description: 256mb Synchronous Dram Based 4bank
• Manufacturer: Hynix Semiconductor

Recovering
Refreshing
Precharge
Recovering
with Auto
Accessing
CURRENT STATE TRUTH TABLE
Rev 1.0 / Aug. 2009
Current
Register
State
Write
Write
Mode
CS RAS CAS WE
H
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
H
H
H
H
X
L
L
L
L
X
L
L
L
L
X
L
L
L
L
X
H
H
H
H
H
H
H
H
H
X
L
L
L
L
X
L
L
L
L
X
L
L
L
L
X
X
H
H
H
H
X
H
H
H
H
X
H
H
H
H
X
L
L
L
L
L
L
L
L
L
BA0/
BA1
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
BA
X
X
X
X
X
X
X
X
X
X
Command
OP CODE
OP CODE
OP CODE
Col Add. A10
Col Add. A10
Col Add. A10
Col Add. A10
Col Add. A10
Col Add. A10
A
Row Add.
Row Add.
Row Add.
max
(Sheet 4 of 4)
X
X
X
X
X
X
X
X
X
X
X
X
X
-A0
Device Deselect
Mode Register Set
Auto or Self Refresh ILLEGAL
Precharge
Bank Activate
Write/WriteAP
Read/ReadAP
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh ILLEGAL
Precharge
Bank Activate
Write/WriteAP
Read/ReadAP
No Operation
Device Deselect
Mode Register Set
Auto or Self Refresh ILLEGAL
Precharge
Bank Activate
Write/WriteAP
Read/ReadAP
No Operation
Device Deselect
Description
Synchronous DRAM Memory 256Mbit
No Operation:
Row Active after t
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
No Operation:
Precharge after t
No Operation:
Precharge after t
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
No Operation:
idle after t
No Operation:
idle after t
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
No Operation:
idle after 2 clock cycles
No Operation:
idle after 2 clock cycles
H57V2562GTR Series
RC
RC
Action
DPL
DPL
DPL
Notes
4,9,12
4,13
4,12
4,12
19
13
13
13
13
13
13
13
13
13
13
13
13
13
13