SMBTA06UPN_07 INFINEON [Infineon Technologies AG], SMBTA06UPN_07 Datasheet
SMBTA06UPN_07
Related parts for SMBTA06UPN_07
SMBTA06UPN_07 Summary of contents
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NPN / PNP Silicon AF Transistor Array High breakdown voltage Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 Tape loading orientation Marking on SC74 package Top View ...
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Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage I = 100 µ Emitter-base ...
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DC current gain 100 - Base-emitter saturation voltage ...
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Collector cutoff current I CBO CBO CBO Collector-base capacitance C Emitter-base capacitance ...
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Permissible Pulse Load K D=0.5 0.2 0 0.05 0.02 0.01 0.005 Permissible Pulse Load thJS p P ...
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Package Outline 2.9 (2.25 Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel ...
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Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). ...