SMBTA06UPN_07 INFINEON [Infineon Technologies AG], SMBTA06UPN_07 Datasheet - Page 2

• Manufacturer Part Number: SMBTA06UPN_07
• Description: NPN / PNP Silicon AF Transistor Array High breakdown voltage
• Manufacturer: INFINEON [Infineon Technologies AG]

Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
Collector-emitter cutoff current
V
DC current gain
I
I
Collector-emitter saturation voltage
I
Base-emitter voltage
I
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
1
2
C
C
E
C
C
C
C
C
For calculation of R
Pulse test: t < 300µs; D < 2%
CB
CB
CE
CB
= 10 µA, I
= 1 mA, I
= 100 µA, I
= 10 mA, V
= 100 mA, V
= 100 mA, I
= 100 mA, V
= 20 mA, V
= 80 V, I
= 80 V, I
= 60 V, I
= 10 V, f = 1 MHz
B
C
E
E
B
= 0
E
CE
CE
= 0
B
= 0
= 0 , T
= 0
CE
CE
= 0
2)
= 10 mA
thJA
= 1 V
= 5 V, f = 20 MHz
= 1 V
= 1 V
2)
please refer to Application Note Thermal Resistance
A
= 150 °C
1)
A
= 25°C, unless otherwise specified
2)
2
f
C
Symbol
R
Symbol
V
V
V
I
I
h
V
V
T
CBO
CEO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BE(ON)
cb
thJS
min.
100
100
80
80
4
-
-
-
-
-
-
-
Values
Value
typ.
100
105
7
-
-
-
-
-
-
-
-
-
-
SMBTA06UPN
max.
0.25
100
0.1
1.2
20
2007-04-27
-
-
-
-
-
-
-
MHz
pF
Unit
K/W
Unit
V
µA
nA
-
V