IRF2804S IRF [International Rectifier], IRF2804S Datasheet - Page 2

• Manufacturer Part Number: IRF2804S
• Description: HEXFET Power MOSFET
• Manufacturer: IRF [International Rectifier]


‚
ƒ
„
…
V
∆ΒV
R
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
DS(on)
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
2
Repetitive rating; pulse width limited by
L=0.24mH, R
Part not recommended for use above this value.
I
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
C
charging time as C
V
T
max. junction temperature. (See fig. 11).
Limited by T
SD
DSS
J
oss
DSS
eff.
≤ 175°C.
≤ 75A, di/dt ≤ 220A/µs, V
SMD
TO-220 Static Drain-to-Source On-Resistance
.
eff. is a fixed capacitance that gives the same
/∆T
J
J
Jmax
G
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C (unless otherwise specified)
= 25Ω, I
, starting T
oss
Parameter
while V
AS
= 75A, V
Ù
Parameter
J
DD
= 25°C,
DS
≤ V
is rising from 0 to 80%
GS
(BR)DSS
=10V.
,
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
†
‡
ˆ
‰
–––
–––
–––
130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
40
Max R
Limited by T
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
avalanche performance.
0.031
6450
1690
5350
1520
2210
–––
–––
–––
–––
–––
–––
–––
160
120
130
130
840
–––
–––
–––
1.5
1.8
4.5
7.5
41
66
13
56
67
DS(on)
1080
-200
–––
–––
–––
250
200
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
280
100
Jmax
2.0
2.3
4.0
1.3
for D
20
62
99
84
, see Fig.12a, 12b, 15, 16 for typical repetitive
2
Pak and TO-262 (SMD) devices.
V/°C
2
mΩ
nC
nH
nC
µA
nA
pF
ns
ns
Pak, when mounted on 1" square PCB
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 75A
= 75A
= 25°C, I
= 25°C, I
= 2.5Ω
= 0V, I
= 10V, I
= 10V, I
= V
= 10V, I
= 40V, V
= 40V, V
= 20V
= -20V
= 32V
= 10V
= 20V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
f
f
Conditions
Conditions
D
S
F
DS
D
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 75A, V
= 75A, V
= 75A
= 75A
= 75A
= 0V to 32V
= 1.0V, ƒ = 1.0MHz
= 32V, ƒ = 1.0MHz
= 0V
= 0V, T
f
www.irf.com
f
D
f
= 1mA
DD
GS
J
G
= 125°C
= 20V
= 0V
G
f
S
D
S
D