IRLW/I520A FAIRCHILD [Fairchild Semiconductor], IRLW/I520A Datasheet

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IRLW/I520A

Manufacturer Part Number
IRLW/I520A
Description
Advanced Power MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
Advanced Power MOSFET
Thermal Resistance
FEATURES
Absolute Maximum Ratings
*
When mounted on the minimum pad size recommended (PCB Mount).
T
Symbol
Symbol
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175℃ Operating Temperature
Lower Leakage Current : 10 μA (Max.) @ V
Lower R
J
R
R
R
dv/dt
V
V
E
E
I
I
P
, T
I
T
θJC
θJA
θJA
DM
AR
DSS
D
GS
AR
AS
D
L
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
: 0.176 Ω (Typ.)
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Characteristic
Characteristic
A
C
=25℃)
=25℃)
C
C
=25℃)
=100℃)
*
DS
*
= 100V
Typ.
--
--
--
- 55 to +175
IRLW/I520A
±20
0.33
Value
100
112
300
1
9.2
6.5
9.2
4.9
6.5
3.8
32
49
BV
R
I
3
1. Gate 2. Drain 3. Source
D
D
DS(on)
2
-PAK
DSS
= 9.2 A
Max.
3.04
62.5
40
= 0.22 Ω
= 100 V
2
1
2
3
I
2
-PAK
Units
Units
℃/W
W/℃
V/ns
mJ
mJ
W
W
V
A
V
A
A
1

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IRLW/I520A Summary of contents

Page 1

... L Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol Characteristic R Junction-to-Case θJC R Junction-to-Ambient θJA R Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount). IRLW/I520A BV DSS R DS(on 9 -PAK = 100V Gate 2. Drain 3. Source Value 100 =25℃ ...

Page 2

... IRLW/I520A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS ΔBV/ΔT Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss ...

Page 3

... Source-Drain Voltage [V] SD Fig 6. Gate Charge vs. Gate-Source Voltage IRLW/I520A @ Gate-Source Voltage [ ...

Page 4

... IRLW/I520A Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ J Fig 9. Max. Safe Operating Area ...

Page 5

... Same Type as DUT 10V DUT Resistor out 90 0.5 rated 10 d(on) t ---- DSS IRLW/I520A Charge d(off off BV DSS 1 2 -------------------- DSS (t) DS Time ...

Page 6

... IRLW/I520A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver Driver ) I , Body Diode Forward Current DUT ) DUT ) + Same Type as DUT • dv/dt controlled by "R " G controlled by Duty Factor "D" • Gate Pulse Width ...

Page 7

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ 2 ...

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