74AUP2G00DC,125 NXP Semiconductors, 74AUP2G00DC,125 Datasheet - Page 4
![IC NAND GATE DL 2IN 8-VSSOP](/photos/6/94/69485/8-vssop_sot765-1_sml.jpg)
74AUP2G00DC,125
Manufacturer Part Number
74AUP2G00DC,125
Description
IC NAND GATE DL 2IN 8-VSSOP
Manufacturer
NXP Semiconductors
Series
74AUPr
Datasheet
1.74AUP2G00DC125.pdf
(21 pages)
Specifications of 74AUP2G00DC,125
Number Of Circuits
2
Package / Case
US8, 8-VSSOP
Logic Type
NAND Gate
Number Of Inputs
2
Current - Output High, Low
4mA, 4mA
Voltage - Supply
0.8 V ~ 3.6 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Logic Family
AUP
High Level Output Current
- 4 mA
Low Level Output Current
4 mA
Propagation Delay Time
20.1 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
0.8 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
74AUP2G00DC-G
74AUP2G00DC-G
935280706125
74AUP2G00DC-G
935280706125
NXP Semiconductors
7. Functional description
Table 4.
[1]
8. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
[1]
[2]
9. Recommended operating conditions
Table 6.
74AUP2G00
Product data sheet
Input
nA
L
L
H
H
Symbol
V
I
V
I
V
I
I
I
T
P
Symbol
V
V
V
T
Δt/ΔV
IK
OK
O
CC
GND
stg
amb
CC
I
O
tot
CC
I
O
H = HIGH voltage level; L = LOW voltage level.
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For VSSOP8 packages: above 110 °C the value of P
For XSON8, XSON8U and XQFN8U packages: above 118 °C the value of P
Function table
Limiting values
Operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
storage temperature
total power dissipation
[1]
nB
L
H
L
H
All information provided in this document is subject to legal disclaimers.
Conditions
V
V
Active mode and Power-down mode
V
T
amb
I
O
O
< 0 V
< 0 V
= 0 V to V
= −40 °C to +125 °C
Rev. 5 — 21 October 2010
Active mode
V
Conditions
Power-down mode; V
tot
CC
derates linearly at 8.0 mW/K.
= 0.8 V to 3.6 V
CC
tot
CC
derates linearly at 7.8 mW/K.
= 0 V
[1]
[1]
[2]
Low-power dual 2-input NAND gate
Output
nY
H
H
H
L
Min
−0.5
−50
−0.5
−50
−0.5
-
-
−50
−65
-
0.8
0
0
Min
0
−40
-
74AUP2G00
Max
+4.6
-
+4.6
-
+4.6
±20
50
-
+150
250
© NXP B.V. 2010. All rights reserved.
Max
3.6
3.6
V
3.6
+125
200
CC
Unit
V
mA
V
mA
V
mA
mA
mA
°C
mW
V
Unit
V
V
V
°C
ns/V
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