FQB4P40 FAIRCHILD [Fairchild Semiconductor], FQB4P40 Datasheet - Page 3

• Manufacturer Part Number: FQB4P40
• Description: 400V P-Channel MOSFET
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

©2000 Fairchild Semiconductor International
Typical Characteristics
1200
1000
800
600
400
200
10
10
10
10
8
6
4
2
0
-1
-2
0
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : -5.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
V
GS
3
-V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
D
10
10
V
, Drain Current [A]
0
0
GS
= - 20V
6
V
GS
= - 10V
C
C
C
oss
iss
rss
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
1. 250μ s Pulse Test
2. T
10
10
※ Note : T
9
gs
gd
ds
1
1
C
+ C
+ C
= 25℃
gd
gd
※ Notes :
(C
1. V
2. f = 1 MHz
J
ds
= 25℃
GS
= shorted)
= 0 V
12
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.0
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
2
Variation vs. Source Current
0.5
150℃
4
25℃
150℃
4
-V
-V
Q
SD
and Temperature
GS
25℃
6
G
1.0
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
V
DS
8
V
DS
V
= -320V
DS
= -200V
-55℃
= -80V
1.5
10
6
12
2.0
14
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
※ Note : I
1. V
2. 250μ s Pulse Test
8
DS
GS
16
= -50V
= 0V
2.5
D
= -3.5 A
18
Rev. A, August 2000
3.0
10
20