FDP150N10A FAIRCHILD [Fairchild Semiconductor], FDP150N10A Datasheet - Page 2

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FDP150N10A

Manufacturer Part Number
FDP150N10A
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDP150N10A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDP150N10A_F102 Rev. A1
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 2mH, I
3. I
4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
BV
ΔBV
I
I
V
R
g
C
C
C
C
Q
Q
Q
Q
ESR
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
ΔT
FS
GS(th)
SD
DS(on)
iss
oss
rss
oss
g(tot)
gs
gs2
gd
rr
SD
Device Marking
DSS
Symbol
J
≤ 100A, di/dt ≤ 200A/μs, V
FDP150N10A
DSS
(er)
AS
= 9.2A, R
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Engry Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
G
= 25Ω, Starting T
FDP150N10A_F102
DD
≤ BV
DSS
Device
Parameter
, Starting T
J
= 25°C
T
J
= 25°C
C
= 25
o
C unless otherwise noted
Package
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
I
Drain Open, f = 1MHz
V
V
D
D
D
DS
DS
GS
DD
GS
GS
GS
GS
GS
DS
DS
DS
DS
F
= 250μA, V
= 250μA, Referenced to 25
= 50A
/dt = 100A/μs
= 80V, V
= 80V, T
= 0V, I
= ±20V, V
= 10V, I
= 50V, V
= 50V, V
= 50V, V
= 50V, I
= 10V, R
= 0V, V
= V
= 10V, I
DS
Test Conditions
, I
SD
2
D
DD
D
Reel Size
D
D
C
GS
GS
GS
GS
GS
GEN
= 50A
= 50A
= 50A
= 50A
= 250μA
DS
= 150
= 50V, I
= 0V
= 0V
= 0V
= 10V
= 0V
-
= 0V
= 4.7Ω
o
C
SD
= 50A
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
C
Tape Width
-
Min.
100
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1080
Typ.
0.08
16.2
12.5
267
436
5.3
2.6
3.7
1.3
50
55
40
11
13
16
21
-
-
-
-
-
-
-
5
-
Quantity
www.fairchildsemi.com
Max.
±100
1440
21.0
15.0
500
355
200
1.3
4.0
50
36
42
52
20
1
50
-
-
-
-
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
nC
μA
pF
pF
pF
pF
nC
nA
ns
ns
ns
ns
ns
Ω
V
A
A
V
V
S
o
C

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