SSU1N50A FAIRCHILD [Fairchild Semiconductor], SSU1N50A Datasheet

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SSU1N50A

Manufacturer Part Number
SSU1N50A
Description
N-CHANNEL POWER MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.SSU1N50A.pdf (7 pages)

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©1999 Fairchild Semiconductor Corporation
Advanced Power MOSFET
Thermal Resistance
FEATURES
Absolute Maximum Ratings
*
When mounted on the minimum pad size recommended (PCB Mount).
T
Symbol
Symbol
Improved Gate Charge
Extended Safe Operating Area
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Lower Leakage Current : 10
Lower R
J
R
dv/dt
R
R
V
V
E
E
I
I
P
, T
I
T
DM
AR
DSS
D
GS
AR
AS
JC
D
JA
JA
L
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
: 4.046
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
(Typ.)
Characteristic
Characteristic
A (Max.) @ V
A
C
=25
=25
C
C
=25
=100
*
C
C
DS
)
)
C
*
C
)
= 500V
)
O
O
O
O
O
1
2
1
1
3
Typ.
--
--
--
- 55 to +150
SSR/U1N50A
+ _
0.82
0.21
Value
500
113
300
1.3
1.3
2.6
3.5
2.5
26
1
BV
R
I
5
30
1. Gate 2. Drain 3. Source
D
3
D-PAK
DS(on)
= 1.3 A
DSS
Max.
4.76
110
50
= 5.5
2
= 500 V
1
2
3
I-PAK
Units
Units
V/ns
W/
C
mJ
mJ
W
W
V
A
A
V
A
/W
C
C
Rev. B

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SSU1N50A Summary of contents

Page 1

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 Lower R : 4.046 DS(ON) Absolute Maximum Ratings Symbol V Drain-to-Source Voltage DSS Continuous ...

Page 2

SSR/U1N50A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R ...

Page 3

N-CHANNEL POWER MOSFET Fig 1. Output Characteristics V GS Top : 8 6.0 V 5.5 V 5.0 V Bottom : 4 Notes : 1. 250 ...

Page 4

SSR/U1N50A Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 0.8 -75 -50 - Junction Temperature [ J Fig 9. Max. Safe Operating Area Operation in This Area is Limited ...

Page 5

N-CHANNEL POWER MOSFET “ Current Regulator ” 50K 12V 200nF 300nF V GS 3mA R 1 Current Sampling (I G Resistor Fig 13. Resistive Switching Test Circuit & Waveforms V out DUT 10V Fig 14. Unclamped ...

Page 6

SSR/U1N50A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver Driver ) DUT ) DUT ) + ...

Page 7

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ...

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