2N111 FAIRCHILD [Fairchild Semiconductor], 2N111 Datasheet
2N111
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2N111 Summary of contents
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... FDFM2N111 Integrated N-Channel PowerTrench General Description FDFM2N111 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for Standard Buck Converter. It features a fast switching, low gate charge MOSFET with very low on-state resistance ...
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... T = 25° Min Typ Max Units mV/°C µ ±100 - - nA 0.6 1.0 1 mV/° 100 - 83 150 mΩ 147 9 273 - Ω 1.7 3 2 0.8 -1 µA 100 - - 0.32 0.39 V FDFM2N111 Rev. C2 (W) ...
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... Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2. 25°C unless otherwise noted A is guaranteed by design while R θCA o C/W when mounted on 2 pad copper 3 is determined by the θ 150 C/W whe mounted on a minimum pad copper Scale letter size paper FDFM2N111 Rev. C2 (W) ...
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... I , DRAIN CURRENT (A) D On-Resistance Variation with 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS On-Resistance Variation with Gate-to-Source Voltage = 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDFM2N111 Rev 1.2 ...
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... Figure 8. 0.1 0.01 0.001 0.0001 0.00001 0.000001 0.5 0.6 0.7 0.8 0 Figure 10 1MHz iss oss DRAIN TO SOURCE VOLTAGE (V) DS Capacitance Characteristics 125 100 REVERSE VOLTAGE (V) R Schottky Diode Reverse Current FDFM2N111 Rev. C2( ...
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... FDFM2N111 Rev. C2 (W) ...
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... The datasheet is printed for reference information only. 7 SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 ® SuperSOT™-8 ® SyncFET™ ® TinyLogic TINYOPTO™ TruTranslation™ UHC™ ® UltraFET UniFET™ ® VCX™ Wire™ Definition Rev. I16 FDFM2N111 Rev. C2 (W) ...