FJD5304DTM FAIRCHILD [Fairchild Semiconductor], FJD5304DTM Datasheet
FJD5304DTM
Related parts for FJD5304DTM
FJD5304DTM Summary of contents
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... C T Junction Temperature J T Storage Temperature STG * Pulse Test 300µs, Duty Cycle = 2% Pulsed Package Marking and Ordering Information Device Marking Device J5304D FJD5304DTM J5304D FJD5304DTF ©2005 Fairchild Semiconductor Corporation FJD5304D Rev. A D-PACK T = 25°C unless otherwise noted C Parameter = 25°C) C Package ...
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Electrical Characteristics Symbol Parameter BV Collector-Base Breakdown Voltage CBO BV Collector-Emitter Breakdown Voltage CEO BV Emitter-Base Breakdown Voltage EBO I Collector Cut-off Current CES I Collector Cut-off Current CEO I Emitter Cut-off Current EBO h DC Current Gain FE V ...
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Typical Performance Characteristics Figure 1. Static Characterstic 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 [V]. COLLECTOR-EMITTER VOLTAGE CE Figure 3. Collector-Emitter Saturation Voltage 0.1 0.01 0.01 ...
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Typical Performance Characteristics Figure 7. Reverse Biased Safe Operating Area 100 200 300 400 500 V [V], COLLECTOR-EMITTER VOLTAGE CE FJD5304D Rev. A (Continued) Figure 8. Power Derating ...
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Mechanical Dimensions FJD5304D Rev. A D-PAK 5 Dimensions in Millimeters www.fairchildsemi.com ...
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TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ ...