S29PL-N_07 SPANSION [SPANSION], S29PL-N_07 Datasheet - Page 4

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S29PL-N_07

Manufacturer Part Number
S29PL-N_07
Description
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
Manufacturer
SPANSION [SPANSION]
Datasheet
Performance Characteristics
4
Note
Typical program and erase times assume the following conditions: 25°C, 3.0 V V
Random Access Time, ns (t
Page Access Time, ns (t
Max CE# Access Time, ns (t
Max OE# Access Time, ns (t
8-Word Page Read
Simultaneous Read/Write
Program/Erase
Standby
Typical Word
Typical Effective Word (32 words in buffer)
Accelerated Write Buffer Program
Typical Sector Erase Time (32-Kword Sector)
Typical Sector Erase Time (128-Kword Sector)
S29PL-N
256
129
127
PACC
ACC
CE
OE
)
)
)
)
S29PL-N MirrorBit
Typical Program & Erase Times (typical values)
D a t a
VBH064 8.0 x 11.6 mm, 64-ball
Read Access Times (@ 30 pF, Industrial Temp.)
Current Consumption (typical values)
S h e e t
Package Options
Flash Family
( P r e l i m i n a r y )
CC
, 10,000 cycles; checkerboard data pattern.
(See Note)
VBH084 8.0 x 11.6 mm, 84-ball
S29PL-N_00_A5 June 6, 2007
65
25
65
25
300 ms
9.4 µs
40 µs
1.6 s
6 µs
65 mA
25 mA
20 µA
6 mA
70
30
70
30

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