MT44K16M36 MICRON [Micron Technology], MT44K16M36 Datasheet - Page 30

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MT44K16M36

Manufacturer Part Number
MT44K16M36
Description
576Mb: x18, x36 RLDRAM 3
Manufacturer
MICRON [Micron Technology]
Datasheet

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ODT Characteristics
Figure 14: ODT Levels and I-V Characteristics
Table 15: ODT DC Electrical Characteristics
ODT Resistors
PDF: 09005aef84003617
576mb_rldram3.pdf – Rev. B 1/12 EN
Parameter/Condition
R
Deviation of V
TT
effective impedance from V
M
with respect to V
Notes:
ODT effective resistance, R
and DKx, DKx# balls. The individual pull-up and pull-down resistors (R
are defined as follows:
R
R
The on-die termination resistance is selected by MR1[4:2]. The following table provides
an overview of the ODT DC electrical characteristics. The values provided are not speci-
TTPU
TTPD
To
other
circuitry
such as
RCV, . . .
1. Tolerance limits are applicable after proper ZQ calibration has been performed at a sta-
2. Measurement definition for R
3. Measure voltage (V
IL(AC)
DDQ
ble temperature and voltage. Refer to ODT Sensitivity (page 32) if either the tempera-
ture or voltage changes after calibration.
I[V
=(V
= (V
Chip in termination mode
to V
IH(AC)
/2
DDQ
OUT
IH(AC)
], then apply V
) / |I
- V
R
R
TTPU
TTPD
OUT
I
I
PU
PD
OUT
ODT
) / |I
|, under the condition that R
M
OUT
) at the tested ball with no load:
IL(AC)
TT
|, under the condition that R
Symbol
, is defined by MR1[4:2]. ODT is applied to the DQ, DM,
R
30
ΔVm
TT_EFF
to ball under test and measure current I[V
R
ΔVM =
TT
TT
: Apply V
=
|
I
I
Micron Technology, Inc. reserves the right to change products or specifications without notice.
OUT
[
I
V
OUT
2 × VM
V
IH(AC)
Min
V
= I
IH(AC)
IH(AC)
-5
DDQ
PD
V
V
DQ
V
DDQ
OUT
SSQ
- I
See Table 16 (page 31).
to ball under test and measure current
]
PU
TTPU
- V
- I
576Mb: x18, x36 RLDRAM 3
- 1 × 100
Nom
[
IL(AC)
V
-
is turned off
IL(AC)
TTPD
]
is turned off
ODT Characteristics
|
Max
© 2011 Micron Technology, Inc. All rights reserved.
+5
IL(AC)
Units
TTPU
%
]:
and R
Notes
1, 2
TTPD
3
)

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