CGD914_01 NXP [NXP Semiconductors], CGD914_01 Datasheet - Page 2

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CGD914_01

Manufacturer Part Number
CGD914_01
Description
860 MHz, 20 dB gain power doubler amplifier
Manufacturer
NXP [NXP Semiconductors]
Datasheet
NXP Semiconductors
FEATURES
 Excellent linearity
 Extremely low noise
 Excellent return loss properties
 Rugged construction
 Gold metallization ensures excellent reliability.
APPLICATIONS
 CATV systems operating in the 40 to 870 MHz
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
at a voltage supply of 24 V (DC), employing both GaAs
and Si dies. Both modules are electrically identical, only
the pinning is different.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2001 Nov 01
G
I
V
V
T
T
tot
frequency range.
SYMBOL
SYMBOL
stg
mb
B
i
860 MHz, 20 dB gain power doubler
amplifier
p
power gain
total current consumption (DC)
supply voltage
RF input voltage
storage temperature
operating mounting base temperature
single tone
132 channels flat
PARAMETER
PARAMETER
f = 45 MHz
f = 870 MHz
V
B
= 24 V
2
PINNING - SOT115J
handbook, halfpage
CONDITIONS
2 and 3
7 and 8
PIN
1
5
9
Side view
input
common
+V
common
output
Fig.1 Simplified outline.
B
CGD914
1
CGD914; CGD914MI
2
19.75
20.2
345
40
20
3
MIN.
MIN.
5
DESCRIPTION
7
8
9
Product specification
20.25
21.5
375
30
70
45
+100
+100
MSA319
output
common
+V
common
input
MAX.
MAX.
B
CGD914MI
dB
dB
mA
V
dBmV
dBmV
C
C
UNIT
UNIT

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