CGD914_01 NXP [NXP Semiconductors], CGD914_01 Datasheet - Page 6

• Manufacturer Part Number: CGD914_01
• Description: 860 MHz, 20 dB gain power doubler amplifier
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
2001 Nov 01
handbook, halfpage
handbook, halfpage
860 MHz, 20 dB gain power doubler
amplifier
Z
(1) V
(2) Typ. +3 .
Fig.6
Z
(1) V
(2) Typ. +3 .
Fig.8
S
S
CSO
CTB
(dB)
(dB)
= Z
= Z
−50
−60
−70
−80
−90
−60
−70
−80
−90
o
o
L
L
.
.
0
0
= 75 ; V
= 75 ; V
Composite triple beat as a function of
frequency under flat conditions.
Composite second order distortion (sum) as
a function of frequency under flat
conditions.
200
200
B
B
= 24 V; 79 chs flat (50 to 550 MHz).
= 24 V; 79 chs flat (50 to 550 MHz).
(3) Typ.
(4) Typ. 3 .
(3) Typ.
(4) Typ. 3 .
400
400
600
600
800
800
f (MHz)
(1)
f (MHz)
MCD982
MCD980
(2)
(1)
(3)
(4)
(2)
(3)
(4)
1000
1000
(dBmV)
48
44
40
36
32
(dBmV)
48
44
40
36
V o
V o
6
handbook, halfpage
handbook, halfpage
Z
(1) V
(2) Typ. +3 .
Fig.7
Z
(1) V
(2) Typ. +3 .
Fig.9
X mod
S
S
(dB)
CSO
(dB)
= Z
= Z
−50
−60
−70
−80
−90
−60
−70
−80
−90
o
o
L
L
.
.
= 75 ; V
0
= 75 ; V
0
Cross modulation as a function of frequency
under flat conditions.
Composite second order distortion (diff) as
a function of frequency under flat
conditions.
(2)
(3)
(4)
200
200
B
B
= 24 V; 79 chs flat (50 to 550 MHz).
= 24 V; 79 chs flat (50 to 550 MHz).
(3) Typ.
(4) Typ. 3 .
(3) Typ.
(4) Typ. 3 .
CGD914; CGD914MI
400
400
600
600
Product specification
800
800
(4)
f (MHz)
f (MHz)
MCD983
MCD981
(1)
(1)
(2)
(3)
1000
1000
(dBmV)
48
44
40
36
32
(dBmV)
48
44
40
36
V o
V o