NAND04GA3C2A STMICROELECTRONICS [STMicroelectronics], NAND04GA3C2A Datasheet - Page 11

• Manufacturer Part Number: NAND04GA3C2A
• Description: 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

NAND04GA3C2A, NAND04GW3C2A
2
2.1
Table 4.
Density of Device
Memory array organization
The memory array is made up of NAND structures where 32 cells are connected in series.
The memory array is organized in blocks where each block contains 128 pages. The array is
split into two areas, the main area and the spare area. The main area of the array is used to
store data whereas the spare area is typically used to store software flags or Bad Block
identification.
The pages are split into a 2048 Byte main area and a spare area of 64 Bytes.Refer to
Figure 4: Memory Array
Bad blocks
The NAND04GA3C2A and NAND04GW3C2A devices may contain Bad Blocks, that is
blocks that contain one or more invalid bits whose reliability is not guaranteed. Additional
Bad Blocks may develop during the lifetime of the device.
The Bad Block Information is written prior to shipping (refer to
management
Table 4: Valid Blocks
shown include both the Bad Blocks that are present when the device is shipped and the Bad
Blocks that could develop later on.
These blocks need to be managed using Bad Blocks Management and Block Replacement
(refer to
Valid Blocks
4 Gbits
Section 9: Software
for more details).
shows the minimum number of valid blocks in each device. The values
Organization.
algorithms).
2008
Min
2 Memory array organization
Section 9.1: Bad block
2048
Max
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