NAND04GA3C2A STMICROELECTRONICS [STMicroelectronics], NAND04GA3C2A Datasheet - Page 36

• Manufacturer Part Number: NAND04GA3C2A
• Description: 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

12 DC and AC parameters
Table 18.
1. DC Characteristics for V
36/51
I
Symbol
OL
I
I
I
I
I
V
V
V
DD1
DD2
DD3
DD4
DD5
I
V
I
LO
OH
LI
OL
(RB)
IH
IL
DC Characteristics, V
Output High Voltage Level
Parameter
Output Low Voltage Level
Standby Current (CMOS)
Output Low Current (RB)
Operating
Output Leakage Current
Input Leakage Current
Current
Standby current (TTL)
Input High Voltage
Input Low Voltage
DDQ
1.8V devices are still to be determined.
Sequential
Program
Erase
Read
DDQ
3V Devices
E=V
E=V
Test Conditions
V
t
V
RLRL
OUT
I
OH
I
E=V
IN
WP=0/V
OL
V
IL,
IH
OL
= 0 to 3.6V
, WP=0/V
= 0 to 3.6V
I
= -400µA
= 2.1mA
(1)
OUT
minimum
DD
= 0.4V
-
-
-
-
-0.2,
= 0 mA
DD
DD
NAND04GA3C2A, NAND04GW3C2A
Min
-0.3
2.0
2.4
8
-
-
-
-
-
-
-
Typ
10
20
15
10
10
-
-
-
-
-
-
V
DD
Max
±10
±10
0.8
0.4
20
30
20
50
1
-
+0.3
Unit
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V