NAND04GA3C2A STMICROELECTRONICS [STMicroelectronics], NAND04GA3C2A Datasheet - Page 14

• Manufacturer Part Number: NAND04GA3C2A
• Description: 4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

3 Signal Descriptions
3.7
3.8
3.9
3.10
3.11
3.12
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Write Protect (WP)
The Write Protect pin is an input that gives a hardware protection against unwanted program
or erase operations. When Write Protect is Low, V
program or erase operations.
It is recommended to keep the Write Protect pin Low, V
Ready/Busy (RB)
The Ready/Busy output, RB, is an open-drain output that can be used to identify if the P/E/R
Controller is currently active.
When Ready/Busy is Low, V
operation completes Ready/Busy goes High, V
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
Refer to the
calculate the value of the pull-up resistor.
V
V
power supply for operations (read, program and erase).
V
Ground, V
ground.
V
V
ground.
V
V
DD
SSQ
DDQ
DD
SS
SSQ
DDQ
provides the power supply to the internal core of the memory device. It is the main
is the ground reference for the I/O power supply. It must be connected to the system
provides power to the I/O buffers.
ground
supply voltage
SS,
Section 12.1: Ready/busy signal electrical characteristics
is the reference for the power supply. It must be connected to the system
OL
, a read, program or erase operation is in progress. When the
OH
.
IL
, the device does not accept any
NAND04GA3C2A, NAND04GW3C2A
IL
, during power-up and power-down.
for details on how to