HYB18T512800B2F QIMONDA [Qimonda AG], HYB18T512800B2F Datasheet - Page 14

• Manufacturer Part Number: HYB18T512800B2F
• Description: 200-Pin SO-DIMM DDR2 SDRAM Modules
• Manufacturer: QIMONDA [Qimonda AG]

3.2
1) Under all conditions,
2) Peak to peak AC noise on
3) Input voltage for any connector pin under test of 0 V ≤
1) DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs.
2) Within the DRAM Component Case Temperature Range all DRAM specifications will be supported
3) Above 85 °C DRAM Case Temperature the Auto-Refresh command interval has to be reduced to
4) When operating this product in the 85 °C to 95 °C
5) Up to 3000 m.
Rev. 1.1, 2007-01
08212006-PKYN-2H1B
Parameter
Device Supply Voltage
Output Supply Voltage
Input Reference Voltage
SPD Supply Voltage
DC Input Logic High
DC Input Logic Low
In / Output Leakage Current
Parameter
Operating temperature (ambient)
DRAM Case Temperature
Storage Temperature
Barometric Pressure (operating & storage)
Operating Humidity (relative)
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of
DC Operating Conditions
V
DDQ
must be less than or equal to
V
REF
may not exceed ± 2 %
Symbol
V
V
V
V
V
V
I
L
DD
DDQ
REF
DDSPD
IH(DC)
IL (DC
)
T
CASE
Values
Min.
1.7
1.7
0.49 ×
1.7
V
– 0.30
– 5
V
REF
V
IN
V
temperature range, the High Temperature Self Refresh has to be enabled by
REF
Symbol
T
T
T
PBar
H
DD
≤
OPR
CASE
STG
OPR
+ 0.125
V
(DC).
V
DDQ
DDQ
14
Supply Voltage Levels and DC Operating Conditions
V
+ 0.3 V; all other pins at 0 V. Current is per pin
REF
is also expected to track noise in
Typ.
1.8
1.8
0.5 ×
—
—
—
—
Values
Min.
0
0
– 50
+69
10
HYS64T[32/64/128]xxxEDL–[25F/…/3.7](–)B2
V
DDQ
Small Outlined DDR2 SDRAM Modules
Max.
+65
+95
+100
+105
90
Max.
1.9
1.9
0.51 ×
3.6
V
V
5
DDQ
REF
t
REFI
– 0.125
+ 0.3
V
= 3.9 µs
DDQ
V
I
DDQ
DD6
Operating Conditions
Unit
°C
°C
°C
kPa
%
.
by approximately 50 %.
Internet Data Sheet
Unit
V
V
V
V
V
V
µA
TABLE 10
TABLE 11
Note
—
1)2)3)4)
—
5)
—
Note
—
1)
2)
—
—
—
3)