PHD34NQ10T PHILIPS [NXP Semiconductors], PHD34NQ10T Datasheet - Page 10

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PHD34NQ10T

Manufacturer Part Number
PHD34NQ10T
Description
N-channel TrenchMOS transistor
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PHD34NQ10T
Manufacturer:
NXP
Quantity:
42 000
Philips Semiconductors
MECHANICAL DATA
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
August 1999
N-channel TrenchMOS
discharge during transport or handling.
Fig.19. SOT428 surface mounting package. Centre pin connected to mounting base.
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
Note
1. Measured from heatsink back to lead.
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT428
max.
2.38
2.22
L 2
A
A 1
0.65
0.45
(1)
b 1
0.89
0.71
A 2
1
e
0.89
0.71
b 2
e 1
IEC
E
b
transistor
2
max.
1.1
0.9
b 1
b
5.36
5.26
b 2
3
JEDEC
w
0.4
0.2
D
L
A
c
M
H E
REFERENCES
A
max.
6.22
5.98
D
mounting
0
max.
4.81
4.45
base
D 1
seating plane
L 1
A 1
max.
scale
EIAJ
10
6.73
6.47
10
E
A 2
c
min.
4.0
A
E 1
20 mm
y
2.285 4.57
e
e 1
E 1
max.
10.4
H E
9.6
PHP34NQ10T, PHB34NQ10T
2.95
2.55
L
PROJECTION
EUROPEAN
min.
0.5
L 1
D 1
0.7
0.5
L 2
0.2
w
ISSUE DATE
98-04-07
max.
0.2
y
SOT428
PHD34NQ10T
Product specification
Rev 1.000

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