PHD34NQ10T PHILIPS [NXP Semiconductors], PHD34NQ10T Datasheet - Page 5

• Manufacturer Part Number: PHD34NQ10T
• Description: N-channel TrenchMOS transistor
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
August 1999
N-channel TrenchMOS
Fig.9. Normalised drain-source on-state resistance.
40
35
30
25
20
15
10
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
30
25
20
15
10
5
0
5
0
-60
Fig.8. Typical transconductance, T
0
0
Drain current, ID (A)
Transconductance, gfs (S)
Normalised On-state Resistance
VDS > ID X RDS(ON)
VDS > ID X RDS(ON)
Fig.7. Typical transfer characteristics.
-40
1
5
-20
2
Tj = 25 C
R
10
Junction temperature, Tj (C)
0
DS(ON)
Gate-source voltage, VGS (V)
3
20
Drain current, ID (A)
15
/R
Tj = 25 C
I
D
g
4
40
fs
= f(V
DS(ON)25 ˚C
= f(I
60
20
5
GS
D
)
80
)
6
= f(T
175 C
25
100 120 140 160 180
transistor
7
175 C
j
)
30
j
8
= 25 ˚C .
35
9
10
40
5
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
10000
4.5
3.5
2.5
1.5
0.5
1000
4
3
2
1
0
100
V
-60 -40 -20
Fig.12. Typical capacitances, C
10
I
C = f(V
GS(TO)
Threshold Voltage, VGS(TO) (V)
D
0.1
= f(V
Capacitances, Ciss, Coss, Crss (pF)
0
Fig.11. Sub-threshold drain current.
Drain current, ID (A)
Fig.10. Gate threshold voltage.
= f(T
PHP34NQ10T, PHB34NQ10T
0.5
GS)
DS
); conditions: V
; conditions: T
j
); conditions: I
0
1
Gate-source voltage, VGS (V)
minimum
Junction Temperature, Tj (C)
Drain-Source Voltage, VDS (V)
20
1.5
1
40
2
typical
60
minimum
2.5
j
typical
GS
D
= 25 ˚C; V
80
maximum
= 1 mA; V
= 0 V; f = 1 MHz
3
PHD34NQ10T
Product specification
100 120 140 160 180
10
3.5
iss
, C
maximum
DS
DS
4
oss
= V
, C
= V
Rev 1.000
Coss
4.5
Crss
Ciss
GS
rss
GS
.
100
5