PHD34NQ10T PHILIPS [NXP Semiconductors], PHD34NQ10T Datasheet - Page 3

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PHD34NQ10T

Manufacturer Part Number
PHD34NQ10T
Description
N-channel TrenchMOS transistor
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PHD34NQ10T
Manufacturer:
NXP
Quantity:
42 000
Philips Semiconductors
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
August 1999
N-channel TrenchMOS
SYMBOL PARAMETER
I
I
V
t
Q
j
S
SM
rr
= 25˚C unless otherwise specified
SD
rr
Continuous source current
(body diode)
Pulsed source current (body
diode)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
transistor
CONDITIONS
I
I
V
F
F
GS
= 17 A; V
= 17 A; -dI
= 0 V; V
GS
R
F
/dt = 100 A/ s;
= 25 V
= 0 V
3
PHP34NQ10T, PHB34NQ10T
MIN.
-
-
-
-
-
TYP. MAX. UNIT
PHD34NQ10T
0.85
0.24
Product specification
76
-
-
140
1.2
35
-
-
Rev 1.000
ns
A
A
V
C

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