STR910FAZ32H6T STMICROELECTRONICS [STMicroelectronics], STR910FAZ32H6T Datasheet - Page 68

• Manufacturer Part Number: STR910FAZ32H6T
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Electrical characteristics
7.8.2
Note:
Table 24.
1.
68/99
Bank erase
Sector erase
Bank program
Sector program
Word program
V
DD
= 1.8V, V
Flash memory characteristics
V
Flash read access for sequential addresses is 0 wait states at 96 MHz.
Flash read access for non-sequential accesses requires 2 wait states when FMI clock is
above 66 MHz. See STR91xF Flash Programming Manual for more information.
Flash memory program/erase characteristics
DDQ
Table 25.
Program/erase cycles
Data retention
DDQ
= 3.3V
Primary Bank (512 Kbytes)
Primary Bank (256 Kbytes)
Secondary Bank (32 Kbytes)
Of Primary Bank (64 Kbytes)
Of Secondary Bank (8 Kbytes)
Primary Bank (512 Kbytes)
Primary Bank (256 Kbytes)
Secondary Bank (32 Kbytes)
Of Primary Bank (64 Kbytes)
Of Secondary Bank (8 Kbytes)
= 2.7 - 3.6V, V
Parameter
Parameter
,
T
A
= 25°C.
Flash memory endurance
DD
= 1.65 - 2V, T
Per word
Test Conditions
A
Half word (16 bits)
= -40 / 85 °C unless otherwise specified.
Test Conditions
STR91xFAx32 STR91xFAx42 STR91xFAx44
100K
Min
20
Typ
1300
3700
1900
700
300
250
500
60
8
4
8
(1)
Value
Typ
100K W/E
Typ after
cycles
Value
1400
4700
2000
750
320
260
520
4.5
62
9
9
(1)
Max
1800
5100
2550
Max
11.5
950
450
320
640
80
11
6
cycles
years
Unit
Unit
ms
ms
ms
ms
ms
ms
ms
ms
µs
s
s