TS83C51RD2 ATMEL [ATMEL Corporation], TS83C51RD2 Datasheet
TS83C51RD2
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TS83C51RD2 Summary of contents
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... Qualpack TS87C51RD2/TS83C51RD2 Qualification Package TS87C51RD2 / TS83C51RD2 CMOS 0.5µm TS87C51RD2 / TS83C51RD2 June 2001 CMOS 0.5 µm JUNE 2001 Atmel Wireless & Microcontrollers 1 ...
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... Qualpack TS87C51RD2/TS83C51RD2 1 Contents 1 CONTENTS ........................................................................................................................................................................ 2 2 GENERAL INFORMATION ............................................................................................................................................ 3 3 TECHNOLOGY INFORMATION .................................................................................................................................. 4 3 AFER ROCESS ECHNOLOGY 3 ......................................................................................................................................................... 5 RODUCT ESIGN 4 QUALIFICATION ............................................................................................................................................................. 6 4 .................................................................................................................................................. 6 UALIFICATION LOW 4 AFER ROCESS UALIFICATION 4.2.1 Process Module Reliability ...................................................................................................................................... 7 4.2.1.1 Hot carrier qualification 4.2.1.2 Electro-migration 4.2.1.3 Time Dependent Dielectric Breakdown 4.2.1.3.1 Field oxide.................................................................................................................................................................. 10 4.2.1.3.2 High Voltage MOS Gate oxide transistors ................................................................................................................. 12 4 ...
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... ATMEL Nantes, France Signed: Pascal LECUYER June 2001 Atmel Wireless & Microcontrollers TS87C51RD2 8 Bits Microcontroller, 64K bytes memory TS87C51RD2: 64k EPROM TS83C51RD2: 64k ROM CMOS 0.5um PLCC 44, VQFP 44 1.4, PDIL 40, PLCC 68, VQFP 64 1.4 Die, Wafer ATMEL Nantes , France ATMEL Nantes , France ATMEL Nantes , France ...
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... Qualpack TS87C51RD2/TS83C51RD2 3 Technology Information 3.1 Wafer Process Technology Process Type (Name): Base Material: Wafer Thickness (final) Wafer Diameter Number Of Masks Gate Oxide (Logic transistors) Material Thickness Gate Oxide (EPROM cell) Material Thickness Polysilicon Number of Layers Thickness Poly 1 Thickness Poly 2 Metal Number of Layers ...
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... Qualpack TS87C51RD2/TS83C51RD2 3.2 Product Design Die Size Pad Size Opening Logic Effective Channel Length Gate Poly Width (min.) Gate Poly Spacing (min.) Metal 1 Width Metal 1 Spacing Metal 2 Width Metal 2 Spacing Metal 3 Width Metal 3 Spacing Contact size Via 1 size Via 2 size June 2001 Atmel Wireless & ...
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... Qualpack TS87C51RD2/TS83C51RD2 4 Qualification 4.1 Qualification Flow General Requirements for Plastic packaged CMOS IC Standard MIL-STD 883D Method 1005 MIL-STD 883D Method 1005 MIL-STD 883D Method 3015.7 JEDEC 78 Atmel Nantes PAQA0046 MIL-STD 883D Method 1010 Atmel Nantes PAQA0184 EIA JESD22-A101 EIA JESD22-A110 EIA JESD20-STD ...
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... Qualpack TS87C51RD2/TS83C51RD2 4.2 Wafer Process Qualification 4.2.1 Process Module Reliability This chapter contains all the information relative to the reliability of the SCMOS3 NV technology. Results presented in the following sections concern the reliability of the basic process steps which build up the technology. 4.2.1.1 Hot carrier qualification STATIC NMOS DEGRADATION Channel length in µ ...
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... Qualpack TS87C51RD2/TS83C51RD2 SCMOS3 NV Frequency degradation 1 0,8 0,6 0,4 0 SCMOS3 NV Frequency degradation 1 0,8 0,6 0,4 0 June 2001 VCC = 3.3 Volts Years VCC = 3.3 Volts Years Atmel Wireless & Microcontrollers 200 MHz 100 MHz 50 MHz 25 MHz 25 30 200 MHz 100 MHz 50 MHz 25 MHz 25 30 ...
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... Qualpack TS87C51RD2/TS83C51RD2 4.2.1.2 Electro-migration Characterization Stresses of electro-migration are achieved for 1000 hours on 32 packaged metal line running on flat with a current density of 2x10 6 A/cm² temperature of 200°C. Lines are declared to be failed for a shift of the initial resistance by 20%. Results are summarized in the table below. ...
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... Qualpack TS87C51RD2/TS83C51RD2 Time Dependent Dielectric Breakdown 4.2.1.3 4.2.1.3.1 Field oxide QBD MEASUREMENT: The critical charge, supported by the thin oxide and related to the extrinsic and intrinsic defects, is measured on TOX/P- and TOX/N- capacitors. The tested capacitor areas are varying from 4.10 capacitors with poly overlaping the field oxide (DEC) and poly non overlaping the field oxide (INC) are measured. ...
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... Qualpack TS87C51RD2/TS83C51RD2 Poly non overlaping the Field oxide on Tox/P- and Tox/N-: The DO is found to be 0.9def/cm². This result is in agreement with the goal for def/cm². 0 -0,01 -0,02 -0,03 -0,04 -0,05 0 DO=0.9 def/cm² Intrinsic defects: The graph here after represents the percentage of failure for a Qbd > 10 Cb/cm² vs the area. The worst given by the bigest capacitors shows that 67% of the total distribution has a Qbd > ...
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... Qualpack TS87C51RD2/TS83C51RD2 4.2.1.3.2 High Voltage MOS Gate oxide transistors High voltage gate oxide transistors are used within the EPROM circuits to increase the external programming voltage up to 14.5 Volts. This operation is needed to reach the appropriate programming conditions result, the maximum voltage between gate and source/drain of high voltage MOS transistors can be about 10 Volts . ...
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... Qualpack TS87C51RD2/TS83C51RD2 The model predicts a failure level of about 1 ppm for 640 seconds at 150°C far above the specification of 0.01% then the High Voltage MOS gate oxide is qualified. Conclusion: The QBD results demonstrate high reliability level of SCMOS3 NV thin oxide. June 2001 Atmel Wireless & Microcontrollers ...
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... Level 1 Thermal Sh. -65°c/150°c HAST 130°c/85%rh Z25873C PLCC44 Marking permanency (resistance to solvents) Solderability 4.3.3 Qualification status The TS87C51RD2 and TS83C51RD2 have been qualified in July 1999. June 2001 Atmel Wireless & Microcontrollers Step Result 12h 0/900 EFR: 0 ppm 500h 0/300 ...
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... Qualpack TS87C51RD2/TS83C51RD2 5 Environmental Information The Atmel Nantes Environmental Policy aims are : - Reducing the use of harmful chemicals in its processes - Reducing the content of harmful materials in its products - Using re-cyclable materials wherever possible - Reducing the energy content of its products As part of that plan, Ozone Depleting Chemicals are being replaced either by Atmel Nantes or its sub-contractors' process ...
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... Qualpack TS87C51RD2/TS83C51RD2 6 Other Data 6.1 ISO9001 and QS900 Certificates June 2001 Atmel Wireless & Microcontrollers ...
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... Qualpack TS87C51RD2/TS83C51RD2 6.2 Data Book Reference The data sheet is available upon request to sales representative or upon direct access on ATMEL Wireless and Microcontrollers web site: http://www.atmel-wm.com/ TS87C51RD2 8-bit Microcontroller Address References All inquiries relating to this document should be addressed to the following: ATMEL Nantes ...