TS83C51RD2 ATMEL [ATMEL Corporation], TS83C51RD2 Datasheet - Page 7

• Manufacturer Part Number: TS83C51RD2
• Description: Qualification Package TS87C51RD2 / TS83C51RD2 CMOS 0.5Um
• Manufacturer: ATMEL [ATMEL Corporation]

Qualpack TS87C51RD2/TS83C51RD2
4.2 Wafer Process Qualification
4.2.1 Process Module Reliability
This chapter contains all the information relative to the reliability of the SCMOS3 NV technology. Results presented
in the following sections concern the reliability of the basic process steps which build up the technology.
4.2.1.1 Hot carrier qualification
EXPERIMENTAL RESULTS IN DYNAMIC MODE : hot carrier degradation effects on inverter propagation time
have been measured on oscillators running at 75 MHz at 7V and 6.5V. Accelerator factor in voltage is then carried
out and expected degradation laws at 5V and 3.3V derived. The following graphs show the frequency degradation
of oscillators running at 5V and 3.3V.
June 2001
Channel length in µm
Process corner
Substrate current in µA/µm
VD=5.5V, VG=2.25V
Substrate current in µA/µm
VD=3.6V, VG=1.6V
Lifetime in seconds for 10% shift of
Gm at VD=5.5V
Lifetime in seconds for 10% shift of
Gm at VD=3.6V
Channel length in µm
Process corner
Substrate current in µA/µm
VD=5.5V, VG=2.25V
Substrate current in µA/µm
VD=3.6V VG=1.25V
Lifetime in seconds for 10% shift of
Gm at VD=5.5V
Lifetime in seconds for 10% shift of
Gm at VD=3.6V
STATIC NMOS DEGRADATION
STATIC PMOS DEGRADATION
Fast
17
3.2e3
8e7
Fast
2.7e4
2e7
0.5
0.35
0.5
0.31
2.3e-3
Fast
Fast
15
3.7e3
10e7
3.1e4
0.55
0.3
0.55
0.28
1.9e-3
2.5e7
Fast
4.2e3
12e7
Fast
3.5e4
0.6
13.4
0.25
0.6
0.25
1.6e-3
3e7
Fast
4.7e3
14e7
Fast
3.9e4
0.65
12.1
0.22
0.65
0.22
1.4e-3
3.8e7
Atmel Wireless & Microcontrollers
Fast
5.2e3
16e7
Fast
4.3e4
0.7
11.1
0.2
0.7
0.21
1.1e-3
4.6e7
Typical
3.8e3
10e7
Typical
3.5e4
0.5
14.7
0.3
0.5
0.24
1.6e-3
3.2e7
7