TS83C51RD2 ATMEL [ATMEL Corporation], TS83C51RD2 Datasheet - Page 11

• Manufacturer Part Number: TS83C51RD2
• Description: Qualification Package TS87C51RD2 / TS83C51RD2 CMOS 0.5Um
• Manufacturer: ATMEL [ATMEL Corporation]

Qualpack TS87C51RD2/TS83C51RD2
Poly non overlaping the Field oxide on Tox/P- and Tox/N-:
The DO is found to be 0.9def/cm². This result is in agreement with the goal for DO of 1 def/cm².
Intrinsic defects:
The graph here after represents the percentage of failure for a Qbd > 10 Cb/cm² vs the area. The worst
given by the bigest capacitors shows that 67% of the total distribution has a Qbd > 10 Cb/cm². This result
guarantees a good reliability behaviour. The critical charge, supported by thin oxide and related to
defects, is measured on TOX/P- capacitors of 42570µm² and TOX/N- capacitors of 85140µm². Following are the
average results obtained on recent lots from a distribution of about 60 sites per wafer. The minimum specification
limit is 10C/cm².
June 2001
0,9
0,8
0,7
0,6
0,5
DO=0.9 def/cm²
1
-0,01
-0,02
-0,03
-0,04
-0,05
0
0
0
CAPA WITH POLY NON OVERLAPING THE FIELD OXIDE
0,02
0,02
Qbd > 10 Cb/cm²
Qbd < 0.1Cb/cm²
Area in cm²
Area in cm²
SCMOS3 PROCESS
0,04
0,04
0,06
0,06
Atmel Wireless & Microcontrollers
INC P-
INC N-
Poisson
DEC P-
DEC N-
INC P-
INC N-
the extrinsic
case
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