TS83C51RD2 ATMEL [ATMEL Corporation], TS83C51RD2 Datasheet - Page 10

• Manufacturer Part Number: TS83C51RD2
• Description: Qualification Package TS87C51RD2 / TS83C51RD2 CMOS 0.5Um
• Manufacturer: ATMEL [ATMEL Corporation]

Qualpack TS87C51RD2/TS83C51RD2
4.2.1.3
4.2.1.3.1 Field oxide
QBD MEASUREMENT:
The critical charge, supported by the thin oxide and related to the extrinsic and intrinsic defects, is measured on
TOX/P- and TOX/N- capacitors. The tested capacitor areas are varying from 4.10
capacitors with poly overlaping the field oxide (DEC) and poly non overlaping the field oxide (INC) are measured.
The distributions have been obtained from 750 measurements for each area and type of capacitors on 10 different
lots.
Extrinsic defects:
The two graphs here after represent the % of failures vs area for Qbd below or equal to 0.1 Cb/cm². The law of
Poisson is used to determine the D0 defect density of the extrinsic defects:
Poly overlaping the Field oxide on Tox/P- and Tox/N-:
The DO is found to be 1.1 def/cm². This result is in agreement with the goal for DO of 1 def/cm².
June 2001
Time Dependent Dielectric Breakdown
DO=1.1 def/cm²
-0,02
-0,04
-0,06
0
0
Y=1-exp(-Area * DO)
CAPA WITH POLY OVERLAPING THE FIELD OXIDE
0,02
Qbd < 0.1Cb/cm²
Area in cm²
0,04
0,06
Atmel Wireless & Microcontrollers
-4
to 5.10
DEC P-
DEC N-
Poisson
-2
cm². Two types of