HFI50N06 SEMIHOW [SemiHow Co.,Ltd.], HFI50N06 Datasheet
HFI50N06
Related parts for HFI50N06
HFI50N06 Summary of contents
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... HFW50N06 / HFI50N06 60V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area : 0.018 Ω (Typ.) @V ...
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Electrical Characteristics Symbol Parameter On Characteristics V Gate Threshold Voltage GS R Static Drain-Source DS(ON) On-Resistance Off Characteristics BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS /ΔT Coefficient J I DSS Zero Gate Voltage Drain Current I Gate-Body ...
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Typical Characteristics V , Drain-Source Voltage [V] DS Figure 1. On Region Characteristics I , Drain Current [A] D Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 3000 2500 C iss 2000 C oss 1500 1000 C ...
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Typical Characteristics 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 7. Breakdown Voltage Variation vs Temperature 3 10 Operation in This Area is Limited by R DS(on ...
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Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF V GS 3mA Fig 13. Resistive Switching Test Circuit & Waveforms 10V Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms ...
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Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver Gate Pulse Width V -------------------------- Gate Pulse Period ( Driver ) I , Body Diode Forward Current FM I ...
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Package Dimension ◎ SEMIHOW REV.A0,Mar 2009 ...
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Package Dimension ◎ SEMIHOW REV.A0,Mar 2009 ...