HFD5N50S SEMIHOW [SemiHow Co.,Ltd.], HFD5N50S Datasheet
HFD5N50S
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HFD5N50S Summary of contents
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... HFD5N50S / HFU5N50S 500V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15.5 nC (Typ.) Extended Safe Operating Area : 1.2 Ω (Typ.) @V ...
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Electrical Characteristics Symbol Parameter On Characteristics V Gate Threshold Voltage GS R Static Drain-Source DS(ON) On-Resistance Off Characteristics BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS Coefficient /Δ DSS Zero Gate Voltage Drain Current I Gate-Body ...
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Typical Characteristics Figure 1. On Region Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage V , Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics Figure 2. Transfer Characteristics Figure 4. Body Diode Forward Voltage Variation with ...
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Typical Characteristics Figure 7. Breakdown Voltage Variation vs Temperature 2 10 Operation in This Area is Limited by R DS(on Notes : ...
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Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF V GS 3mA Fig 13. Resistive Switching Test Circuit & Waveforms 10V Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms ...
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Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver Gate Pulse Width V -------------------------- Gate Pulse Period ( Driver ) I , Body Diode Forward Current FM I ...
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Package Dimension 6.6 ±0.2 5.35 ±0.15 0.8 ±0.2 0.6 ±0.2 2.3typ 2.3typ TO-252 2.3 ±0.1 0.5 ±0.05 1.2 ±0.3 0.05 0.5 +0.1 -0.05 +0.1 -0.05 ◎ SEMIHOW REV.A0,OCT 2009 ...
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Package Dimension 6.6 5.35 0.75 ±0.15 0.8 ±0.15 0.6 ±0.1 2.3typ 2.3typ TO-251 ±0.2 ±0.15 2.3 ±0.1 0.5 ±0.05 +0.1 0.5 -0.05 1.2 ±0.3 ◎ SEMIHOW REV.A0,OCT 2009 ...