HFD2N70S SEMIHOW [SemiHow Co.,Ltd.], HFD2N70S Datasheet

HFD2N70S

Manufacturer Part Number

HFD2N70S

Description

700V N-Channel MOSFET

Manufacturer

SEMIHOW [SemiHow Co.,Ltd.]

Datasheet

1.HFD2N70S.pdf (8 pages)

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* When mounted on the minimum pad size recommended (PCB Mount)

dv/dt

HFD2N70S / HFU2N70S

700V N-Channel MOSFET

DSS

θJC

θJA

FEATURES

 Originative New Design

 Superior Avalanche Rugged Technology

 Robust Gate Oxide Technology

 Very Low Intrinsic Capacitances

 Excellent Switching Characteristics

 Unrivalled Gate Charge : 6.2 nC (Typ.)

 Extended Safe Operating Area

 Lower R

 100% Avalanche Tested

, T

Thermal Resistance Characteristics

Absolute Maximum Ratings

Symbol

STG

DS(ON)

Drain-Source Voltage

Drain Current

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

Junction-to-Case

Junction-to-Ambient*

Junction-to-Ambient

: 5.0 Ω (Typ.) @V

– Continuous (T

– Pulsed

- Derate above 25℃

= 25℃)

Parameter

= 25℃) *

=10V

=25℃ unless otherwise specified

= 25℃)

= 100℃)

(Note 1)

(Note 3)

(Note 1)

(Note 2)

(Note 1)

Typ.

-55 to +150

Value

±30

700

300

1.5

0.9

6.0

1.5

3.8

4.5

2.5

0.3

1.Gate 2. Drain 3. Source

DS(on) typ

HFD2N70S

D-PAK

= 1.5 A

DSS

Max.

110

3.3

= 700 V

◎ SEMIHOW REV.A0,Dec 2009

= 5.0 Ω

I-PAK

Dec 2009

HFU2N70S

Units

W/℃

V/ns

Units

℃/W

℃

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