HFD5N40 SEMIHOW [SemiHow Co.,Ltd.], HFD5N40 Datasheet

HFD5N40

Manufacturer Part Number

HFD5N40

Description

400V N-Channel MOSFET

Manufacturer

SEMIHOW [SemiHow Co.,Ltd.]

Datasheet

1.HFD5N40.pdf (8 pages)

Current page: 1 of 8
Download datasheet (900Kb)

dv/dt

* When mounted on the minimum pad size recommended (PCB Mount)

HFD5N40 / HFU5N40

400V N-Channel MOSFET

DSS

θJC

θJA

FEATURES

 Originative New Design

 Superior Avalanche Rugged Technology

 Robust Gate Oxide Technology

 Very Low Intrinsic Capacitances

 Excellent Switching Characteristics

 Unrivalled Gate Charge : 13 nC (Typ.)

 Extended Safe Operating Area

 Lower R

 100% Avalanche Tested

, T

Thermal Resistance Characteristics

Absolute Maximum Ratings

Symbol

STG

DS(ON)

Drain-Source Voltage

Drain Current

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

Junction-to-Case

Junction-to-Ambient*

Junction-to-Ambient

: 1.27 Ω (Typ.) @V

– Continuous (T

– Pulsed

- Derate above 25℃

= 25℃)

Parameter

= 25℃)

=10V

=25℃ unless otherwise specified

= 25℃)

= 100℃)

(Note 1)

(Note 3)

(Note 1)

(Note 2)

(Note 1)

Typ.

-55 to +150

Value

±30

2.15

13.6

0.36

400

510

300

3.4

4.5

2.5

1.Gate 2. Drain 3. Source

DS(on) typ

HFD5N40

D-PAK

= 3.4 A

DSS

Max.

2.78

110

= 400 V

◎ SEMIHOW REV.A0,July 2005

= 1.27 Ω

I-PAK

July 2005

HFU5N40

Units

W/℃

Units

℃/W

V/ns

℃

Related parts for HFD5N40

Related keywords

HFD5N40 datasheet
HFD5N40 data sheet
HFD5N40 pdf datasheet
HFD5N40 component
HFD5N40 part
HFD5N40 distributor
HFD5N40 RoHS
HFD5N40 datasheet download