HFI640 SEMIHOW [SemiHow Co.,Ltd.], HFI640 Datasheet
HFI640
Related parts for HFI640
HFI640 Summary of contents
Page 1
... HFW640 / HFI640 200V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.) Extended Safe Operating Area : 0.145 Ω (Typ.) @V ...
Page 2
Electrical Characteristics Symbol Parameter On Characteristics V Gate Threshold Voltage GS R Static Drain-Source DS(ON) On-Resistance Off Characteristics BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS Coefficient /Δ DSS Zero Gate Voltage Drain Current I Gate-Body ...
Page 3
Typical Characteristics V GS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V Bottom: 5. Drain-Source Voltage [V] DS Figure 1. On Region Characteristics I , Drain Current [A] D Figure 3. On Resistance Variation vs Drain Current and ...
Page 4
Typical Characteristics 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 7. Breakdown Voltage Variation vs Temperature Operation in This Area is Limited DS(on ...
Page 5
Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF V GS 3mA Fig 13. Resistive Switching Test Circuit & Waveforms 10V Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms ...
Page 6
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver Gate Pulse Width V -------------------------- Gate Pulse Period ( Driver ) I , Body Diode Forward Current FM I ...
Page 7
Package Dimension ◎ SEMIHOW REV.A0,Mar 2008 ...
Page 8
Package Dimension ◎ SEMIHOW REV.A0,Mar 2008 ...