HFD1N80 SEMIHOW [SemiHow Co.,Ltd.], HFD1N80 Datasheet
HFD1N80
Related parts for HFD1N80
HFD1N80 Summary of contents
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... HFD1N80 / HFU1N80 800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7.5 nC (Typ.) Extended Safe Operating Area : 13 Ω (Typ.) @V ...
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Electrical Characteristics Symbol Parameter On Characteristics V Gate Threshold Voltage GS R Static Drain-Source DS(ON) On-Resistance Off Characteristics BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS Coefficient /Δ DSS Zero Gate Voltage Drain Current I Gate-Body ...
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Typical Characteristics V , Drain-Source Voltage [V] DS Figure 1. On Region Characteristics 10V 20V 0.0 0.5 1.0 1 Drain Current [A] D Figure 3. ...
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Typical Characteristics 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 7. Breakdown Voltage Variation vs Temperature 1 10 Operation in This Area is Limited by R DS(on ※ ...
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Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF V GS 3mA Fig 13. Resistive Switching Test Circuit & Waveforms 10V Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms ...
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Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver Gate Pulse Width V -------------------------- Gate Pulse Period ( Driver ) I , Body Diode Forward Current FM I ...
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Package Dimension 6.6 ±0.2 5.35 ±0.15 0.8 ±0.2 0.6 ±0.2 2.3typ 2.3typ TO-252 2.3 ±0.1 0.5 ±0.05 1.2 ±0.3 0.05 0.5 +0.1 -0.05 +0.1 -0.05 ◎ SEMIHOW REV.A0,April 2006 ...
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Package Dimension 6.6 5.35 0.75 ±0.15 0.8 ±0.15 0.6 ±0.1 2.3typ 2.3typ TO-251 ±0.2 ±0.15 2.3 ±0.1 0.5 ±0.05 +0.1 0.5 -0.05 1.2 ±0.3 ◎ SEMIHOW REV.A0,April 2006 ...