HFD1N80 SEMIHOW [SemiHow Co.,Ltd.], HFD1N80 Datasheet

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HFD1N80

Manufacturer Part Number
HFD1N80
Description
800V N-Channel MOSFET
Manufacturer
SEMIHOW [SemiHow Co.,Ltd.]
Datasheet
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
D
AS
AR
J
L
HFD1N80 / HFU1N80
800V N-Channel MOSFET
DSS
GS
θJC
θJA
θJA
FEATURES
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge : 7.5 nC (Typ.)
 Extended Safe Operating Area
 Lower R
 100% Avalanche Tested
, T
Thermal Resistance Characteristics
Absolute Maximum Ratings
Symbol
Symbol
STG
DS(ON)
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Junction-to-Case
Junction-to-Ambient*
Junction-to-Ambient
: 13 Ω (Typ.) @V
A
C
– Continuous (T
– Continuous (T
– Pulsed
- Derate above 25℃
= 25℃)
Parameter
= 25℃) *
Parameter
GS
=10V
T
C
=25℃ unless otherwise specified
C
C
= 25℃)
= 100℃)
(Note 1)
(Note 3)
(Note 1)
(Note 2)
(Note 1)
Typ.
--
--
--
-55 to +150
Value
±30
0.63
0.36
800
300
1.0
4.0
1.0
4.5
4.0
2.5
90
45
BV
R
I
D
1.Gate 2. Drain 3. Source
HFD1N80
1
DS(on) typ
D-PAK
G
DSS
= 1.0 A
Max.
3
2.78
110
50
2
= 800 V
◎ SEMIHOW REV.A0,April 2006
= 13 Ω
1
3
HFU1N80
2
April 2006
I-PAK
D
S
3
Units
W/℃
Units
℃/W
V/ns
mJ
mJ
W
W
V
A
A
A
V
A

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HFD1N80 Summary of contents

Page 1

... HFD1N80 / HFU1N80 800V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 7.5 nC (Typ.)  Extended Safe Operating Area : 13 Ω (Typ.) @V  ...

Page 2

Electrical Characteristics Symbol Parameter On Characteristics V Gate Threshold Voltage GS R Static Drain-Source DS(ON) On-Resistance Off Characteristics BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS Coefficient /Δ DSS Zero Gate Voltage Drain Current I Gate-Body ...

Page 3

Typical Characteristics V , Drain-Source Voltage [V] DS Figure 1. On Region Characteristics 10V 20V 0.0 0.5 1.0 1 Drain Current [A] D Figure 3. ...

Page 4

Typical Characteristics 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 7. Breakdown Voltage Variation vs Temperature 1 10 Operation in This Area is Limited by R DS(on ※ ...

Page 5

Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF V GS 3mA Fig 13. Resistive Switching Test Circuit & Waveforms 10V Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms ...

Page 6

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver Gate Pulse Width V -------------------------- Gate Pulse Period ( Driver ) I , Body Diode Forward Current FM I ...

Page 7

Package Dimension 6.6 ±0.2 5.35 ±0.15 0.8 ±0.2 0.6 ±0.2 2.3typ 2.3typ TO-252 2.3 ±0.1 0.5 ±0.05 1.2 ±0.3 0.05 0.5 +0.1 -0.05 +0.1 -0.05 ◎ SEMIHOW REV.A0,April 2006 ...

Page 8

Package Dimension 6.6 5.35 0.75 ±0.15 0.8 ±0.15 0.6 ±0.1 2.3typ 2.3typ TO-251 ±0.2 ±0.15 2.3 ±0.1 0.5 ±0.05 +0.1 0.5 -0.05 1.2 ±0.3 ◎ SEMIHOW REV.A0,April 2006 ...

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