HFD1N70 SEMIHOW [SemiHow Co.,Ltd.], HFD1N70 Datasheet
HFD1N70
Related parts for HFD1N70
HFD1N70 Summary of contents
Page 1
... HFD1N70 / HFU1N70 700V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.5 nC (Typ.) Extended Safe Operating Area : 14.0 Ω (Typ.) @V ...
Page 2
Electrical Characteristics Symbol Parameter On Characteristics V Gate Threshold Voltage GS R Static Drain-Source DS(ON) On-Resistance Off Characteristics BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS Coefficient /Δ DSS Zero Gate Voltage Drain Current I Gate-Body ...
Page 3
Typical Characteristics Figure 1. On Region Characteristics 0.0 0.3 0.6 0.9 1.2 1 Drain Current [A] D Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 250 ...
Page 4
Typical Characteristics 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 7. Breakdown Voltage Variation vs Temperature Operation in This Area is Limited by R DS(on Notes : o 1. ...
Page 5
Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF V GS 3mA Fig 13. Resistive Switching Test Circuit & Waveforms 10V Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms ...
Page 6
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver Gate Pulse Width V -------------------------- Gate Pulse Period ( Driver ) I , Body Diode Forward Current FM I ...
Page 7
Package Dimension 6.6 ±0.2 5.35 ±0.15 0.8 ±0.2 0.6 ±0.2 2.3typ 2.3typ TO-252 2.3 ±0.1 0.5 ±0.05 1.2 ±0.3 0.05 0.5 +0.1 -0.05 +0.1 -0.05 ◎ SEMIHOW REV.A0,Dec 2008 ...
Page 8
Package Dimension 6.6 5.35 0.75 ±0.15 0.8 ±0.15 0.6 ±0.1 2.3typ 2.3typ TO-251 ±0.2 ±0.15 2.3 ±0.1 0.5 ±0.05 +0.1 0.5 -0.05 1.2 ±0.3 ◎ SEMIHOW REV.A0,Dec 2008 ...