HFD1N70 SEMIHOW [SemiHow Co.,Ltd.], HFD1N70 Datasheet - Page 4

• Manufacturer Part Number: HFD1N70
• Description: 700V N-Channel MOSFET
• Manufacturer: SEMIHOW [SemiHow Co.,Ltd.]

Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
-100
-1
0
Figure 7. Breakdown Voltage Variation
10
Figure 9. Maximum Safe Operating Area
0
-50
T
V
J
, Junction Temperature [
DS
vs Temperature
10
0
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
* Notes :
10
1
10
1. T
2. T
3. Single Pulse
-1
0
10
C
J
= 150
= 25
-5
0.01
0.02
o
0.05
50
C
D=0.5
o
DS(on)
C
0.1
0.2
DC
Figure 11. Transient Thermal Response Curve
(continued)
100 ms
100
10
10
10 ms
2
o
C]
single pulse
-4
* Note :
1. V
2. I
t
1 ms
D
1
GS
= 250µA
, Square Wave Pulse Duration [sec]
150
= 0 V
100 µs
10
200
-3
10
3
10
-2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.8
0.6
0.4
0.2
0.0
-100
25
P
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
* Notes :
10
DM
1. Z
2. Duty Factor, D=t
3. T
-1
-50
θJC
JM
50
(t) = 4.2
- T
C
= P
T
t
J
T
, Junction Temperature [
1
C
DM
t
0
, Case Temperature [ ℃]
o
2
10
C/W Max.
* Z
vs Temperature
vs Case Temperature
75
0
1
θJC
/t
2
(t)
50
100
10
100
1
o
C]
◎ SEMIHOW REV.A0,Dec 2008
125
* Note :
1. V
2. I
150
D
GS
= 0.4 A
= 10 V
200
150