2N6052_06 ONSEMI [ON Semiconductor], 2N6052_06 Datasheet

2N6052_06

Manufacturer Part Number

2N6052_06

Description

Darlington Complementary Silicon Power Transistors

Manufacturer

ONSEMI [ON Semiconductor]

Datasheet

1.2N6052_06.pdf (7 pages)

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Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î

Î Î Î Î Î Î Î Î Î Î Î Î

Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î

Î Î Î Î Î Î Î Î Î Î Î Î

Darlington Complementary

Silicon Power Transistors

switching applications.

•

(1) Indicates JEDEC Registered Data.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

MAXIMUM RATINGS (1)

THERMAL CHARACTERISTICS

ON Semiconductort

March, 2006 − Rev. 3

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base voltage

Collector Current — Continuous

Base Current

Total Device Dissipation

Operating and Storage Junction

Thermal Resistance, Junction to Case

. . . designed for general−purpose amplifier and low frequency

These devices are available in Pb−free package(s). Specifications herein

apply to both standard and Pb−free devices. Please see our website at

www.onsemi.com for specific Pb−free orderable part numbers, or

contact your local ON Semiconductor sales office or representative.

High DC Current Gain —

Collector−Emitter Sustaining Voltage — @ 100 mA

Monolithic Construction with Built−In Base−Emitter Shunt Resistors

Derate above 25_C

Temperature Range

= 25_C

CEO(sus)

Characteristic

= 3500 (Typ) @ I

Rating

Peak

= 80 Vdc (Min) — 2N6058

100 Vdc (Min) — 2N6052, 2N6059

160

140

120

100

= 5.0 Adc

Î Î Î Î

Î Î Î Î Î

Symbol

CEO

, T

Symbol

stg

θJC

Figure 1. Power Derating

Î Î Î Î

Î Î Î Î Î Î Î

, CASE TEMPERATURE (°C)

2N6058

Î Î Î Î Î Î

– 65 to + 200_C

0.857

150

5.0

0.2

Î Î Î Î

Rating

100

1.17

2N6052

2N6059

100

125

Î Î Î

150

Watts

W/_C

_C/W

Unit

Vdc

Adc

Unit

175

200

*ON Semiconductor Preferred Device

POWER TRANSISTORS

COMPLEMENTARY

2N6052

2N6058

2N6059

Publication Order Number:

80 −100 VOLTS

DARLINGTON

12 AMPERE

150 WATTS

CASE 1−07

TO−204AA

SILICON

NPN

PNP

(TO−3)

2N6052/D

Related parts for 2N6052_06

2N6052_06 Summary of contents

Page 1

ON Semiconductort Darlington Complementary Silicon Power Transistors . . . designed for general−purpose amplifier and low frequency switching applications. • High DC Current Gain — 3500 (Typ • Collector−Emitter Sustaining Voltage — @ 100 ...

Page 2

CHARACTERISTICS Î Î Î Î Î ...

Page 3

D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 0.03 0.01 SINGLE 0.02 PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 ACTIVE−REGION SAFE OPERATING AREA 5.0 0.5 ms 1.0 ms 2.0 ...

Page 4

FREQUENCY (kHz) Figure 7. Small−Signal Current Gain 500 T = 25° 3 300 I = 5.0 A ...

Page 5

PNP 2N6052 20,000 10,000 T = 150°C J 5000 3000 25°C 2000 −55 °C 1000 500 300 200 0.2 0.3 0.5 1.0 2.0 3 COLLECTOR CURRENT (AMP 25° 3.0 A ...

Page 6

PACKAGE DIMENSIONS CASE 1−07 TO−204AA (TO− −T− SEATING PLANE 0.13 (0.005 −Y− −Q− 0.13 (0.005 http://onsemi.com ...

Page 7

Notes ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products ...

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