2N6052_06 ONSEMI [ON Semiconductor], 2N6052_06 Datasheet - Page 3

• Manufacturer Part Number: 2N6052_06
• Description: Darlington Complementary Silicon Power Transistors
• Manufacturer: ONSEMI [ON Semiconductor]

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
T
C
There are two limitations on the power handling ability of
The data of Figures 5, 6, and 7 is based on T
0.05
is variable depending on conditions. Second breakdown
5.0
2.0
1.0
0.5
0.2
0.1
50
20
10
0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
10
0.01
T
J
= 200°C
0.02
V
0.05
D = 0.5
CE
SINGLE
PULSE
0.02
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.2
0.1
0.5 ms
SECOND BREAKDOWN LIM-
ITED
BONDING WIRE LIMITED
THERMAL LIMITATION
@T
0.03
Figure 5. 2N6058
20
C
= 25°C (SINGLE PULSE)
0.01
0.05 0.1
1.0 ms
5.0 ms
30
ACTIVE−REGION SAFE OPERATING AREA
0.2
0.3
50
0.1 ms
J(pk)
0.5
d
c
70
Figure 4. Thermal Response
= 200_C;
C
http://onsemi.com
− V
1.0
100
CE
2.0
t, TIME (ms)
3
3.0
pulse limits are valid for duty cycles to 10% provided T
v 200_C; T
4. At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
θJC
θJC
0.05
5.0
2.0
1.0
0.5
0.2
0.1
5.0
50
20
10
(t) = r(t) R
= 1.17°C/W MAX
− T
10
C
= P
T
10
J
= 200°C
θJC
(pk)
J(pk)
1
θ
V
JC
Figure 6. 2N6052, 2N6059
CE
20
(t)
may be calculated from the data in Figure
, COLLECTOR−EMITTER VOLTAGE
0.5 ms
20
30
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION
@T
C
1.0 ms
= 25°C (SINGLE PULSE)
50
P
(VOLTS)
5.0 ms
(pk)
30
DUTY CYCLE, D = t
100
t
1
t
2
200
50
0.1 ms
300
1
/t
2
500
70
d
c
1000
J(pk)
100