MJE13005_06 ONSEMI [ON Semiconductor], MJE13005_06 Datasheet
MJE13005_06
Manufacturer Part Number
MJE13005_06
Description
4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 75 WATTS
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.MJE13005_06.pdf
(7 pages)
MJE13005
SWITCHMODEt Series
NPN Silicon Power
Transistors
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulator’s, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
•
•
•
•
•
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 7
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Base Current
Emitter Current
Total Device Dissipation @ T
Derate above 25°C
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
These devices are designed for high−voltage, high−speed power
100_C is 180 ns (Typ)
V
Reverse Bias SOA with Inductive Loads @ T
Inductive Switching Matrix 2 to 4 A, 25 and 100_C t
700 V Blocking Capability
SOA and Switching Applications Information
Pb−Free Package is Available*
CEO(sus)
400 V
Characteristics
Rating
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
Preferred Device
C
C
= 25_C
= 25_C
V
Symbol
Symbol
T
CEO(sus)
V
V
R
R
J
I
I
I
P
P
, T
T
CEV
EBO
CM
BM
EM
I
I
I
qJA
qJC
C
B
E
D
D
L
stg
C
= 100_C
−65 to
Value
+150
Max
62.5
1.67
400
700
600
275
12
16
75
9
4
8
2
4
6
2
c
@ 3A,
1
W/_C
W/_C
_C/W
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
_C
_C
W
W
Preferred devices are recommended choices for future use
and best overall value.
MJE13005
MJE13005G
Device
400 VOLTS − 75 WATTS
POWER TRANSISTOR
1
ORDERING INFORMATION
2
A
Location
Y
WW
G
age
3
MARKING DIAGRAM
http://onsemi.com
NPN SILICON
4 AMPERE
(Pb−Free)
MJE13005G
Package
TO−220
TO−220
AY WW
= Assembly
= Year
= Work Week
= Pb−Free Pack-
CASE 221A−09
Publication Order Number:
TO−220AB
STYLE 1
50 Units / Rail
50 Units / Rail
Shipping
MJE13005/D
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MJE13005_06 Summary of contents
Page 1
MJE13005 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, ...
Page 2
ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...
Page 3
T = 150° 25° −55 ° 0.04 0.06 0.1 0.2 0.4 0 COLLECTOR CURRENT (AMP) C Figure 1. DC ...
Page 4
I CPK 90% V clamp 10 90 TIME Figure 7. Inductive Switching Measurements Table 1. Typical Inductive Switching Performance Î Î Î Î Î Î Î Î Î ...
Page 5
Table 2. Test Conditions for Dynamic Performance REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING 0.001 DUTY CYCLE ≤ 10% 68 ≤ ...
Page 6
SAFE OPERATING AREA INFORMATION The Safe Operating Area Figures 11 and 12 are specified ratings for these devices under the test conditions shown 0.5 0.2 0.1 0.05 0.02 0. ...
Page 7
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right ...