FDD8424H_11 FAIRCHILD [Fairchild Semiconductor], FDD8424H_11 Datasheet

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FDD8424H_11

Manufacturer Part Number
FDD8424H_11
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDD8424H_11.pdf (11 pages)
©2011 Fairchild Semiconductor Corporation
FDD8424H_F085A Rev.B1
FDD8424H
Dual N & P-Channel PowerTrench
N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ
Features
Q1: N-Channel
Q2: P-Channel
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
E
T
R
R
D
DS
GS
D
AS
J
θJC
θJC
Max r
Max r
Max r
Max r
Fast switching speed
Qualified to AEC Q101
RoHS Compliant
, T
Symbol
Device Marking
STG
FDD8424H
DS(on)
DS(on)
DS(on)
DS(on)
= 24mΩ at V
= 30mΩ at V
= 54mΩ at V
= 70mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case, Single Operation for Q1
Thermal Resistance, Junction to Case, Single Operation for Q2
D1/D2
Dual DPAK 4L
_F085A
GS
GS
GS
GS
FDD8424H_F085A
= 10V, I
= 4.5V, I
= -10V, I
= -4.5V, I
Device
- Continuous (Package Limited)
- Continuous (Silicon Limited)
- Continuous
- Pulsed
D
D
D
S1
D
= 9.0A
= 7.0A
= -6.5A
G1
= -5.6A
S2
G2
T
C
= 25°C unless otherwise noted
Parameter
TO-252-4L
Package
®
1
MOSFET
General Description
These dual N and P-Channel enhancement
MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench- process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Application
Inverter
H-Bridge
G1
T
T
T
T
T
C
A
A
C
A
= 25°C (Note 1a)
= 25°C (Note 1b)
= 25°C
= 25°C
= 25°C
Reel Size
N-Channel
13”
(Note 1)
(Note 1)
(Note 1)
(Note 3)
S1
D1
G2
Tape Width
±20
Q1
9.0
12mm
40
20
26
55
30
29
P-Channel
-55 to +150
D2
4.1
3.5
3.1
1.3
S2
±20
-6.5
Q2
-40
-20
-20
-40
October 2011
35
33
www.fairchildsemi.com
2500 units
mode Power
Quantity
Units
°C/W
mJ
°C
W
V
V
A
tm

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FDD8424H_11 Summary of contents

Page 1

FDD8424H _F085A Dual N & P-Channel PowerTrench N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features Q1: N-Channel Max r = 24mΩ 10V, I DS(on) GS Max r = 30mΩ 4.5V, I DS(on) GS ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics V Gate to ...

Page 3

Electrical Characteristics Symbol Parameter Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes determined with the device mounted on a 1in θJA by the ...

Page 4

Typical Characteristics (Q1 N-Channel 10V GS PULSE DURATION = 80 40 DUTY CYCLE = 0.5%MAX DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. ...

Page 5

Typical Characteristics (Q1 N-Channel 15V GATE CHARGE(nC) g Figure 7. Gate Charge Characteristics ...

Page 6

Typical Characteristics (Q1 N-Channel DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0. 4.1 C/W JC θ 0.005 - ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev.B1 T ...

Page 7

Typical Characteristics (Q2 P-Channel -10V DRAIN TO SOURCE VOLTAGE (V) DS Figure 14. On- Region Characteristics 1 -6. -10V GS 1.4 1.2 ...

Page 8

Typical Characteristics (Q2 P-Channel -6. -15V GATE CHARGE(nC) g Figure 20. Gate Charge Characteristics 125 ...

Page 9

Typical Characteristics (Q2 P-Channel DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0. 3.5 JC θ 0.005 - ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev. ...

Page 10

Fairchild Semiconductor Corporation FDD8424H_F085A Rev.B1 11 www.fairchildsemi.com ...

Page 11

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. 2Cool™ FlashWriter AccuPower™ FPS™ Auto-SPM™ F-PFS™ ® AX-CAP™* ...

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