FDD8444_06 FAIRCHILD [Fairchild Semiconductor], FDD8444_06 Datasheet
FDD8444_06
Related parts for FDD8444_06
FDD8444_06 Summary of contents
Page 1
FDD8444 N-Channel PowerTrench 40V, 50A, 5.2mΩ Features Typ r = 4mΩ 10V, I DS(on) GS Typ Q = 89nC 10V g(10) GS Low Miller Charge Low Q Body Diode rr UIS Capability (Single Pulse/ ...
Page 2
MOSFET Maximum Ratings Symbol V Drain to Source Voltage DSS V Gate to Source Voltage GS Drain Current Continuous (V I Continuous (V = 10V, with Pulsed E Single Pulse Avalanche Energy AS Power Dissipation P D ...
Page 3
Electrical Characteristics Symbol Parameter Switching Characteristics t Turn-On Time on t Turn-On Delay Time d(on) t Turn-On Rise Time r t Turn-Off Delay Time d(off) t Turn-Off Fall Time f t Turn-Off Time off Drain-Source Diode Characteristics V Source to ...
Page 4
Typical Characteristics 1.2 1.0 0.8 0.6 0.4 0.2 0 100 T , CASE TEMPERATURE C Figure 1. Normalized Power Dissipation vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER 0.50 0.20 0.10 0.05 ...
Page 5
Typical Characteristics 1000 100 10 CURRENT LIMITED BY PACKAGE 1 SINGLE PULSE OPERATION IN THIS AREA MAY MAX RATED J LIMITED BY r DS(on 0 DRAIN TO ...
Page 6
Typical Characteristics 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -80 - JUNCTION TEMPERATURE J Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 10000 1000 C rss f = 1MHz ...
Page 7
FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build ...