FDMC2674_07 FAIRCHILD [Fairchild Semiconductor], FDMC2674_07 Datasheet
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FDMC2674_07
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FDMC2674_07 Summary of contents
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FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ Features Max r = 366mΩ 10V, I DS(on) GS Typ Q = 12.7nC 10V g GS Low Miller charge Low Q Body Diode rr Optimized efficiency ...
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Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT Coefficient J I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics V Gate to ...
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Typical Characteristics 3.0 2.5 2.0 1.5 1.0 0.5 PULSE DURATION = 80 DUTY CYCLE = 0.5%MAX 0.0 0.0 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 2 10V GS ...
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Typical Characteristics 100V GATE CHARGE(nC) g Figure 7. Gate Charge Characteristics 125 J 0.1 0.01 0 ...
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Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 1E FDMC2674 Rev 25°C unless otherwise noted J SINGLE PULSE 135 C/W θ JA ...
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FDMC2674 Rev.F 6 www.fairchildsemi.com ...
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TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ ...