FDMC2674_07 FAIRCHILD [Fairchild Semiconductor], FDMC2674_07 Datasheet
FDMC2674_07
Manufacturer Part Number
FDMC2674_07
Description
N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366m?
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDMC2674_07.pdf
(7 pages)
©2006 Fairchild Semiconductor Corporation
FDMC2674 Rev.F
FDMC2674
N-Channel UltraFET Trench MOSFET
220V, 7.0A, 366mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
DS
GS
D
J
θJC
θJA
Max r
Typ Q
Low Miller charge
Low Q
Optimized efficiency at high frequencies
UIS Capability ( Single Pulse and Repetitive Pulse)
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMC2674
5
DS(on)
g
rr
= 12.7nC at V
Body Diode
6
= 366mΩ at V
7
Bottom
8
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
4
= 10V
GS
3
= 10V, I
-Continuous
FDMC2674
2
-Pulsed
Device
1
Power 33
D
= 1.0A
T
A
= 25°C unless otherwise noted
D
Parameter
D
D
Power 33
Package
D
Top
1
S
General Description
UltraFET
benchmark efficiency in power conversion applications.
Optimized for r
these devices are ideal for high frequency DC to DC converters.
Application
T
T
T
T
DC/DC converters and Off-Line UPS
Distributed Power Architectures
A
S
C
C
A
= 25°C
= 25°C
= 25°C
= 25°C
S
G
Reel Size
device
7’’
DS(on)
(Note 1b)
(Note 1a)
(Note 1a)
D
D
D
D
(Note 1)
, low ESR, low total and Miller gate charge,
combines
5
6
7
8
Tape Width
characteristics
8mm
-55 to +150
Ratings
13.8
220
±20
3.0
7.0
1.0
2.1
42
60
January 2007
www.fairchildsemi.com
3000 units
that
Quantity
4
3
2
1
G
S
S
S
Units
°C/W
enable
°C
W
V
V
A
tm
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FDMC2674_07 Summary of contents
Page 1
FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ Features Max r = 366mΩ 10V, I DS(on) GS Typ Q = 12.7nC 10V g GS Low Miller charge Low Q Body Diode rr Optimized efficiency ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT Coefficient J I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics V Gate to ...
Page 3
Typical Characteristics 3.0 2.5 2.0 1.5 1.0 0.5 PULSE DURATION = 80 DUTY CYCLE = 0.5%MAX 0.0 0.0 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 2 10V GS ...
Page 4
Typical Characteristics 100V GATE CHARGE(nC) g Figure 7. Gate Charge Characteristics 125 J 0.1 0.01 0 ...
Page 5
Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 1E FDMC2674 Rev 25°C unless otherwise noted J SINGLE PULSE 135 C/W θ JA ...
Page 6
FDMC2674 Rev.F 6 www.fairchildsemi.com ...
Page 7
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ ...