FDD8451_08 FAIRCHILD [Fairchild Semiconductor], FDD8451_08 Datasheet
FDD8451_08
Manufacturer Part Number
FDD8451_08
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDD8451_08.pdf
(6 pages)
©2008 Fairchild Semiconductor Corporation
FDD8451 Rev. B1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDD8451
N-Channel PowerTrench
40V, 28A, 24mΩ
Features
V
V
I
E
P
T
R
R
R
D
J
DS
GS
AS
D
θJC
θJA
θJA
Max r
Max r
Low gate charge
Fast Switching
High performance trench technology for extremely low
r
RoHS compliant
Symbol
, T
DS(on)
Device Marking
STG
FDD8451
DS(on)
DS(on)
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous @T
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
= 24mΩ at V
= 30mΩ at V
GS
GS
-Continuous @T
-Pulsed
= 10V, I
= 4.5V, I
FDD8451
Device
D
D
= 9A
= 7A
Parameter
T
A
C
C
=25°C
= 25°C unless otherwise noted
=25°C
D-PAK(TO-252)
Package
®
MOSFET
1
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, fast
switching speed and extremely low r
Application
DC/DC converter
Backlight inverter
Reel Size
(Note 1)
(Note 2)
G
13’’
D
S
Tape Width
-55 to 150
12mm
Ratings
±20
4.1
40
28
78
20
37
40
96
9
DS(on)
March 2008
www.fairchildsemi.com
.
2500 units
Quantity
Units
°C/W
°C/W
°C/W
mJ
°C
W
V
V
A
tm
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FDD8451_08 Summary of contents
Page 1
FDD8451 N-Channel PowerTrench 40V, 28A, 24mΩ Features Max r = 24mΩ 10V, I DS(on) GS Max r = 30mΩ 4.5V, I DS(on) GS Low gate charge Fast Switching High performance trench technology for extremely ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics V Gate to ...
Page 3
Typical Characteristics 10V PULSE DURATION = 80 GS DUTY CYCLE = 0.5%MAX 4. DRAIN TO SOURCE VOLTAGE (V) DS Figure ...
Page 4
Typical Characteristics 15V GATE CHARGE(nC) g Figure 7. Gate Charge Characteristics 100 150 o C ...
Page 5
Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 0.005 - Figure 13. Transient Thermal Response Curve FDD8451 Rev 25°C unless otherwise noted J ...
Page 6
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ ...