FDD8874_08 FAIRCHILD [Fairchild Semiconductor], FDD8874_08 Datasheet - Page 4

• Manufacturer Part Number: FDD8874_08
• Description: N-Channel PowerTrench MOSFET 30V, 116A, 5.1m ohm
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Figure 5. Forward Bias Safe Operating Area
100
1000
80
60
40
20
100
0.1
0
10
14
12
10
1.5
1
8
6
4
1
2
Figure 7. Transfer Characteristics
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
T
DD
SINGLE PULSE
T
T
I
J
D
OPERATION IN THIS
J
C
LIMITED BY r
= 175
= 1A
= MAX RATED
= 15V
= 25
Voltage and Drain Current
AREA MAY BE
I
o
o
D
C
C
V
V
= 35A
GS
V
T
DS
2.0
GS
J
, GATE TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
= 25
4
, GATE TO SOURCE VOLTAGE (V)
DS(ON)
o
C
2.5
6
10
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
T
J
C
= -55
= 25°C unless otherwise noted
o
3.0
C
8
10ms
10 s
100 s
1ms
DC
3.5
60
10
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
100
Figure 10. Normalized Drain to Source On
Figure 6. Unclamped Inductive Switching
500
100
80
60
40
20
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
1
0.1
Resistance vs Junction Temperature
0
Figure 8. Saturation Characteristics
-80
If R = 0
t
If R
t
AV
AV
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
= (L)(I
= (L/R)ln[(I
V
0
-40
GS
STARTING T
AS
V
= 5V
DS
)/(1.3*RATED BV
T
0.2
J
t
, DRAIN TO SOURCE VOLTAGE (V)
AS
AV
, JUNCTION TEMPERATURE (
V
, TIME IN AVALANCHE (ms)
0
*R)/(1.3*RATED BV
GS
Capability
1
= 10V
J
= 150
V
40
GS
0.4
DSS
= 2.5V
o
C
- V
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 s
80
STARTING T
DD
DSS
)
10
V
- V
GS
V
120
GS
DD
0.6
= 10V, I
o
FDD8874 / FDU8874 Rev.B2
) +1]
= 4V
C)
J
T
= 25
V
C
160
GS
D
= 25
= 35A
o
= 3V
C
o
C
100
200
0.8