FDMC8296_10 FAIRCHILD [Fairchild Semiconductor], FDMC8296_10 Datasheet
![no-image](/images/no-image-200.jpg)
FDMC8296_10
Related parts for FDMC8296_10
FDMC8296_10 Summary of contents
Page 1
FDMC8296 N-Channel Power Trench 30V, 18A, 8.0m: Features Max r = 8.0m 10V, I DS(on) GS Max r = 13.0m 4.5V, I DS(on) GS High performance trench technology for extremely low ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS 'BV Breakdown Voltage Temperature DSS 'T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics V Gate to ...
Page 3
Typical Characteristics 10V 4. PULSE DURATION = 80 DUTY CYCLE = 0.5%MAX DRAIN TO SOURCE VOLTAGE (V) DS Figure ...
Page 4
Typical Characteristics 12A 10V GATE CHARGE(nC) g Figure 7. Gate Charge Characteristics 125 0.01 ...
Page 5
Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.005 - ©2010 Fairchild Semiconductor Corporation FDMC8296 Rev. 25°C unless otherwise noted J SINGLE PULSE ...
Page 6
Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMC8296 Rev.C1 6 www.fairchildsemi.com ...
Page 7
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ F-PFS™ FRFET Auto-SPM™ Build it Now™ Global ...