FDMC8296_10 FAIRCHILD [Fairchild Semiconductor], FDMC8296_10 Datasheet
FDMC8296_10
Manufacturer Part Number
FDMC8296_10
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDMC8296_10.pdf
(7 pages)
©2010 Fairchild Semiconductor Corporation
FDMC8296 Rev.C1
FDMC8296
N-Channel Power Trench
30V, 18A, 8.0m:
Features
„ Max r
„ Max r
„ High performance trench technology for extremely low r
„ Termination is Lead-free and RoHS Compliant
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
TJC
TJA
, T
Symbol
Device Marking
STG
FDMC8296
DS(on)
DS(on)
= 8.0m: at V
= 13.0m: at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
= 10V, I
= 4.5V, I
FDMC8296
-Continuous
-Continuous (Silicon limited)
MLP 3.3x3.3
-Pulsed
Device
D
Pin 1
= 12A
D
= 10A
T
A
®
= 25°C unless otherwise noted
S
Parameter
MOSFET
S
S
G
MLP 3.3X3.3
DS(on)
Package
Bottom
1
D
T
T
T
T
T
General Description
This
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
„ DC - DC Buck Converter
„ Notebook battery power management
„ Load switch in Notebook
A
C
C
A
C
D
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
D
D
N-Channel
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
D
D
D
D
MOSFET
6
7
8
5
Tape Width
is
12 mm
-55 to +150
Ratings
produced using Fairchild
±20
2.3
4.6
30
18
44
12
52
72
27
53
September 2010
®
process that has
www.fairchildsemi.com
3000 units
Quantity
4
1
3
2
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A
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FDMC8296_10 Summary of contents
Page 1
FDMC8296 N-Channel Power Trench 30V, 18A, 8.0m: Features „ Max r = 8.0m 10V, I DS(on) GS „ Max r = 13.0m 4.5V, I DS(on) GS „ High performance trench technology for extremely low ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS 'BV Breakdown Voltage Temperature DSS 'T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics V Gate to ...
Page 3
Typical Characteristics 10V 4. PULSE DURATION = 80 DUTY CYCLE = 0.5%MAX DRAIN TO SOURCE VOLTAGE (V) DS Figure ...
Page 4
Typical Characteristics 12A 10V GATE CHARGE(nC) g Figure 7. Gate Charge Characteristics 125 0.01 ...
Page 5
Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.005 - ©2010 Fairchild Semiconductor Corporation FDMC8296 Rev. 25°C unless otherwise noted J SINGLE PULSE ...
Page 6
Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMC8296 Rev.C1 6 www.fairchildsemi.com ...
Page 7
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ F-PFS™ FRFET Auto-SPM™ Build it Now™ Global ...