FDMC8676_07 FAIRCHILD [Fairchild Semiconductor], FDMC8676_07 Datasheet - Page 2

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FDMC8676_07

Manufacturer Part Number
FDMC8676_07
Description
N-Channel PowerTrench MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
©2007 Fairchild Semiconductor Corporation
FDMC8676 Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting T
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
∆V
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
the user's board design.
iss
oss
rss
g
∆T
∆T
g
g
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1in
J
= 25
o
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C; N-ch: L =3mH, I
AS
Parameter
= 12A, V
DD
= 30V, V
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25°C unless otherwise noted
a.
GS
53°C/W when mounted on a 1 in
pad of 2 oz copper
= 10V
V
V
V
V
V
f = 1MHz
f = 1MHz
I
I
V
V
V
V
I
V
V
V
V
V
V
I
D
D
D
F
DD
GS
GS
GS
DS
GS
GS
GS
GS
GS
GS
DD
DS
GS
GS
= 14.7A, di/dt = 100A/µs
= 250µA, V
= 250µA, referenced to 25°C
= 250µA, referenced to 25°C
= 0V to 10V
= 0V to 4.5V
= 15V, V
= 15V, I
= 10V, R
= 24V,
= 0V
=10V, I
= 0V, I
= 0V, I
= ±20V, V
= V
= 10V, I
= 4.5V, I
= 5V, I
2
DS
Test Conditions
, I
S
S
D
D
D
D
= 14.7A
= 1.7A
D
GS
GEN
2
GS
= 14.7A
= 14.7A, T
= 14.7A,
D
DS
= 14.7A
= 250µA
= 11.5A
= 0V,
= 0V
= 0V
= 6Ω
V
I
T
D
DD
J
= 14.7A
= 125°C
= 15V,
J
(Note 2)
(Note 2)
= 125°C
θJC
is guaranteed by design while R
Min
1.0
30
b.
125°C/W when mounted on a
minimum pad of 2 oz copper
1455
Typ
760
105
0.8
0.7
1.8
4.7
7.1
6.8
0.8
33
17
32
56
22
21
10
-5
9
3
2
4
3
±100
1935
1010
Max
100
155
3.0
5.9
9.3
9.1
1.3
1.2
θCA
19
10
36
10
30
14
53
31
www.fairchildsemi.com
1
is determined by
mV/°C
mV/°C
Units
mΩ
µA
nA
nC
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
V
V
S

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