LH28F800 Sharp Electrionic Components, LH28F800 Datasheet - Page 35
![no-image](/images/no-image-200.jpg)
LH28F800
Manufacturer Part Number
LH28F800
Description
8 M-bit (512 kB x 16) SmartVoltage Flash Memories
Manufacturer
Sharp Electrionic Components
Datasheet
1.LH28F800.pdf
(45 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LH28F800BGE-TL75
Manufacturer:
TI
Quantity:
1 200
Part Number:
LH28F800BGE-TL75
Manufacturer:
SHARR
Quantity:
20 000
Company:
Part Number:
LH28F800BGHB-TTL90
Manufacturer:
INTEL
Quantity:
3
Part Number:
LH28F800BGHB-TTL90
Manufacturer:
SHARP
Quantity:
20 000
Company:
Part Number:
LH28F800BGHE-TL85
Manufacturer:
SHARP
Quantity:
400
Part Number:
LH28F800BGHE-TL85
Manufacturer:
SHARP
Quantity:
20 000
Company:
Part Number:
LH28F800BGHE-TTL10
Manufacturer:
HYINX
Quantity:
5 374
Part Number:
LH28F800BGHE-TTL10
Manufacturer:
SHARP
Quantity:
20 000
Company:
Part Number:
LH28F800BJE-PBTL90
Manufacturer:
SHARP
Quantity:
196
Part Number:
LH28F800BJE-PBTL90
Manufacturer:
SHARP
Quantity:
20 000
6.2.5 AC CHARACTERISTICS FOR WE#-CONTROLLED WRITE OPERATIONS (contd.)
NOTES :
1. Read timing characteristics during block erase, word
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid A
4. V
SYMBOL
• V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
PHHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHRL
WHGL
QVVL
QVPH
CC
write and lock-bit configuration operations are the same
as during read-only operations. Refer to Section 6.2.4
"AC CHARACTERISTICS" for read-only operations.
word write, or lock-bit configuration.
should be held at V
word write, or lock-bit configuration success (SR.1/3/4/5 = 0).
PP
= 5.0±0.25 V, 5.0±0.5 V, T
should be held at V
Write Cycle Time
RP# High Recovery to WE#
Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
RP# V
V
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to RY/BY# Going Low
Write Recovery before Read
V
RY/BY# High
RP# V
RY/BY# High
PP
PP
VERSIONS
Setup to WE# Going High
Hold from Valid SRD,
HH
HH
Setup to WE# Going High
PARAMETER
Hold from Valid SRD,
HH
) until determination of block erase,
PPH1/2/3
IN
and D
A
(and if necessary RP#
= 0 to +70˚C or –40 to +85
IN
V
V
CC
CC
for block erase,
±0.25 V
±0.5 V
NOTE
2, 4
2, 4
2
2
2
3
3
LH28F800SGH-L70
LH28F800SG-L70
(NOTE 5)
MIN.
100
100
70
10
40
40
40
10
30
- 35 -
1
5
5
0
0
0
5. See Fig. 10 "Transient Input/Output Reference
6. See Fig. 11 "Transient Input/Output Reference
MAX.
˚
C
90
LH28F800SG-L/SGH-L (FOR TSOP, CSP)
Waveform" and Fig. 12 "Transient Equivalent Testing
Load Circuit" (High Speed Configuration) for testing
characteristics.
Waveform" and Fig. 12 "Transient Equivalent Testing
Load Circuit" (Standard Configuration) for testing
characteristics.
LH28F800SGH-L70
LH28F800SG-L70
(NOTE 6)
MIN.
100
100
80
10
40
40
40
10
30
1
5
5
0
0
0
MAX.
90
LH28F800SGH-L10
LH28F800SG-L10
(NOTE 6)
MIN.
100
100
100
40
40
10
40
10
30
1
5
5
0
0
0
MAX.
90
(NOTE 1)
UNIT
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns