AM29BL802CB-120RZE AMD [Advanced Micro Devices], AM29BL802CB-120RZE Datasheet - Page 42

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AM29BL802CB-120RZE

Manufacturer Part Number
AM29BL802CB-120RZE
Description
8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
AC CHARACTERISTICS
Notes:
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, D
2. Figure indicates the last two bus cycles of the command sequence.
40
device.
Addresses
RESET#
RY/BY#
WE#
Data
OE#
CE#
Figure 25. Alternate CE# Controlled Write Operation Timings
t
RH
555 for program
2AA for erase
t
t
t
WS
WC
WH
A0 for program
55 for erase
t
GHEL
t
t
t
DS
CP
PA for program
SA for sector erase
555 for chip erase
CPH
t
AS
t
DH
D A T A
t
AH
Am29BL802C
PD for program
30 for sector erase
10 for chip erase
t
BUSY
S H E E T
t
WHWH1 or 2
Data# Polling
DQ7#
PA
D
22371C7 November 3, 2006
OUT
OUT
= data written to the

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